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Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures

published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

  1. 10.5353/th_b3155967
  2. b3155967
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/40144
Date January 2005
CreatorsHuang, Yan, 黃燕
ContributorsFung, SHY, Beling, CD
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31559670
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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