An investigation into the feasibility of laser ablation as a material selective removal technique was conducted. Polyimide films approximately 1 micron thick were prepared on silicon wafers. The ablation rate of these films as a function of laser fluence was studied. It was observed that a minimum threshold fluence of 67 +/- 6 mJ/cm^2 had to be surpassed to achieve a significant material removal rate. In addition to polyimide, the removal and damage characteristics of aluminum films were also examined. These films, which ranged in thickness from 50 to 1000 nm, were deposited on polyimide coated silicon wafers. It was found that the best results were produced by a single shot removal technique, with the quality of the hole dependent upon the incident fluence. At lower fluences, removal ceased and only physical damage to the film occurred. In an attempt to characterize this damage, the electrical resistance of small aluminum wires was monitored as they were exposed to laser pulses. It was found that a change in the resistance of the wires could not be detected prior to the onset of visible damage. Once the optimal removal fluences for both materials were determined, a multilayer consisting of an aluminum layer "sandwiched" between two polyimide layers was prepared. By varying only the incident fluence, it was possible to remove upper layers without removing or damaging the underlying ones. In a related experiment, the possible incubation of polyimide by low fluence laser pulses was also examined. / Thesis / Master of Engineering (ME)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/24631 |
| Date | 03 1900 |
| Creators | Guzzo, Edward |
| Contributors | Preston, J.S., Engineering Physics |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
| Type | Thesis |
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