We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic
temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in
isotopically purified 28Si-SOI layers using such structures. The back gate is implemented using
MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer,
enabling large and uniform electric fields up to 2V/lm to be applied across the SOI layer. Utilizing
this structure, we measure the Stark shift parameters of arsenic donors embedded in the 28Si-SOI
layer and find a contact hyperfine Stark parameter of na=-1.9+/-0.7x10-3 lm2/V2. We also
demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron
spin resonance.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31858 |
| Date | 04 October 2018 |
| Creators | Lo, C. C., Lo Nardo, R., Simmons, S., Weis, C. D., Tyryshkin, A. M., Meijer, Jan Berend, Rogalla, D., Lyon, S. A., Bokor, J., Schenkel, T., Morton, J. J. L. |
| Publisher | AIP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0003-6951, 193502 |
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