In this thesis, we have setup the measurement systems for photocurrent and electro-absorption (Da) spectroscopy, and have investigated the optical characteristics of semiconductor quantum well structures in the long wavelength regime. The measured samples are of three epi-structures including a p-i-n laser structure of the symmetric multiple quantum wells (SMQWs), a p-i-n laser structure of the asymmetric multiple quantum wells (AMQWs), and n-i-n BRAQWETS structures. The samples are fabricated in mesa type photodiode structures for the measurements.
From the Da spectrum of the n-i-n BRAQWETS structures, we observe a blue shift ~ 10nm of Da peak caused by band filling effect at +5V bias. Besides, a red shift ~ 2nm has been obtained at ¡V5V bias caused by the quantum-confined Stark effect. The photocurrent spectrum of the SMQWs shows an e1-hh1 absorption peak at hn=0.813eV (l=1.525mm) which matches the photoluminesce spectrum. The e1-hh1 transition has a red-shift ~ 38nm at ¡V5V bias for the SMQWs. For the AMQWs consisting of 5, 10, 15nm wells, we observe the e1-hh1 absorption peaks at 0.758eV (l=1.64mm), 0.772eV (l=1.6mm) and 0.797eV (l=1.55mm), respectively. As the AMQWs biased at ¡V5V, a red-shift ~ 25nm is obtained for the e1-hh1 transition corresponding to the 15nm-wide wells.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710101-144722 |
| Date | 10 July 2001 |
| Creators | Fan, Hsiang-Pin |
| Contributors | T. Y. Chang, W. H. Cheng, L. H. Peng, T. S. Lay |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710101-144722 |
| Rights | campus_withheld, Copyright information available at source archive |
Page generated in 0.0017 seconds