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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Wavelength tunable and Multi-channel external cavity semiconductor laser using Electro-absorption modulation

Kuo, Chung-Yu 09 July 2007 (has links)
This thesis utilized the characteristics of the external cavity system including the wavelength tuning and the multi-channel output, and using the Quantum Confined Stark Effect (QCSE) by adding the bias on the electro-absorption modulator to build a new method of the Q-switched modulation .The method made the wavelength tuning and multi-channel output of high speed Q-switched external cavity semiconductor laser with the colinear output come true . The system of the external cavity semiconductor laser with the electro-absorption modulator making of the VCSEL with the wavelength 850nm and 830nm could be modulated to 63ns . The tuning range could be up to 0.9nm . Each of the channel would be separated into 0.2nm . We could obtain the two channels output by using the double electro-absorption modulators on the specific position .The distance of the wavelength is 4.61nm.
2

Fabrication of InGaAsP/InGaAsP Electro-absorption Modulator by Wet Etching

Lee, Dan-Long 06 July 2004 (has links)
Abstract The high-speed performance of the lump-type electroabsorption modulator (EAM) is mainly limited by RC-effect. By taking advantage of the distributive effects, the traveling-wave structure can overcome the RC-lump effect. However, in order to enhance the limitation imposed by the conventional slow-waveguide type of traveling-wave structure, the speed of the device is still mainly restricted by the distributed capacitance of the waveguide. In this work, a novel type of traveling-wave-electroabsorption-modulator based on the undercut-etching the active region is successfully fabricated and measured. The methods of the processing adopted here is to lower the capacitance by chemical-wet-etching and two-time subsequent undercut etching on active region to further decrease the parasitic capacitance between P-type and N-type cladding layer. Also, the optical scattering loss may be reduced due the smooth sidewall of the waveguide from the wet etching. The whole processing shown in this thesis includes the lift-off technique by lithography, the metalization for n-, p- contacts (by thermal evaporator) and CPW microwave transmission (by e-beam evaporator), and PMGI-planarization. ¡V15dB optical transmission, ¡V6dB electrical transmission loss and >20GHz 3dB bandwidth of electrical-to-optical response at 50£[termination is measured on this kind of devices. It exhibits a high potential on the application of high-speed optical-fiber link in the future.
3

Photocurrent and Electroabsorption Spectroscopy for Semiconductor Quantum Well Structures

Fan, Hsiang-Pin 10 July 2001 (has links)
In this thesis, we have setup the measurement systems for photocurrent and electro-absorption (Da) spectroscopy, and have investigated the optical characteristics of semiconductor quantum well structures in the long wavelength regime. The measured samples are of three epi-structures including a p-i-n laser structure of the symmetric multiple quantum wells (SMQWs), a p-i-n laser structure of the asymmetric multiple quantum wells (AMQWs), and n-i-n BRAQWETS structures. The samples are fabricated in mesa type photodiode structures for the measurements. From the Da spectrum of the n-i-n BRAQWETS structures, we observe a blue shift ~ 10nm of Da peak caused by band filling effect at +5V bias. Besides, a red shift ~ 2nm has been obtained at ¡V5V bias caused by the quantum-confined Stark effect. The photocurrent spectrum of the SMQWs shows an e1-hh1 absorption peak at hn=0.813eV (l=1.525mm) which matches the photoluminesce spectrum. The e1-hh1 transition has a red-shift ~ 38nm at ¡V5V bias for the SMQWs. For the AMQWs consisting of 5, 10, 15nm wells, we observe the e1-hh1 absorption peaks at 0.758eV (l=1.64mm), 0.772eV (l=1.6mm) and 0.797eV (l=1.55mm), respectively. As the AMQWs biased at ¡V5V, a red-shift ~ 25nm is obtained for the e1-hh1 transition corresponding to the 15nm-wide wells.
4

InGaAlAs/InP Electro-Absorption Modulator Structures Grown by Molecular Beam Epitaxy

Lu, Sho-Shou 30 June 2003 (has links)
The work of this thesis includes designs, molecular beam epitaxy (MBE) growths and optical study of electro-absorption modulator (EAM) structures. Three EAM structures are designed near 1.5 um : symmetric, asymmetric multiple quantum wells (MQWs) of TE polarization, and polarization insensitive MQWs. For symmetric and asymmetric MQWs simulation of TE polarization, their red-shift are 31 nm and 50 nm, respectively, as the electric field decrease from -40 kV/cm to -120 kV/cm. For polarization insensitive MQWs, we use the strained quantum-well concept to achieve same transition energy and absorption. After growth by MBE system, the samples were fabricated in mesa type by photolithography and wet etching. For symmetric and asymmetric quantum wells of TE polarization¡Gthe red-shift are 16 nm and 49 nm, respectively, as the bias decrease form 0-1 volt to 0-6 volt. Because of small ¡µn near subband transition energy, these two samples exhibit small chirp parameter. However, the photoluminescence (PL) and photocurrent spectra of these two ones were not near 1.5 um and obvious absorption edge. The possible reason is that the molecular beam flux have changed during growth. For polarization insensitive MQWs, the PL spectra shows 1494 nm, which only 25.6 nm differ from our design. Also, the photocurrent spectra of TE and TM polarization nearly exhibit same transition energy and have small chirp parameter.
5

InP-Based Electro-Absorption Modulator Structures Grown and DLTS System

Chang, Chun-Ying 08 July 2004 (has links)
The thesis includes two aspects. The first part includes designs and optical study of electro-absorption modulator structures. Three structures are designed near 1.5
6

Investigation and Fabrication of the Integration of Traveling- Wave Electroabsorption Modulator and Optical Mode Converter using Wet-Etching method

Tsai, Shun-An 10 July 2006 (has links)
Electro¡VAbsorption Modulator has become a very important element in optical fiber communication due to its capability of integrating with other semiconductor devices. In order to get high-speed performance, the small size of waveguides is necessary. But it also brings to high coupling loss, resulting in low optical fiber link. In general, the waveguide mode is elliptical shape with sizes of 1¡Ñ2£gm to 1¡Ñ3£gm, which will definitely lead to high mode mismatch as adapted to conventional single¡Vmode optical fibers of 8£gm circular mode and cause 7~10 dB insertion loss[21]. Typically, micro lens, tapered fibers or taper optical waveguides are used to confine optical fiber mode to waveguide in order to reduce the insertion loss. In the thesis, we have developed a novel structure of tapered optical spot-size mode converter monolithically integrated with traveling-wave electro-absorption modulator (TWEAM) by using whole wet-etching processing. The optical waveguides are fabricated by wet-etching and subsequent selective undercut etching. By adjusting the wet-etching time, the waveguide core for TWEAM and the tapered spot-size mode converter can thus be engineered. The selective undercut wet etching not only can reduce the optical scattering loss, but also decrease the parasitic capacitance, leading to high optical and microwave transmission of TWEAM. Based on the model described in literature [4-8] and also Beam Propagation Method (BPM), the optical index of epi-layers is used to calculate the three¡Vdimension modal of optical mode and coupling efficiency. The microwave equivalent circuit is used to calculate and design device structure. In this thesis, the Spot¡VSize Converter monolithically with Traveling¡VWave Electro¡VAbsorption Modulator device is successfully fabricated and demonstrated. TWEAM integrated spot-size optical mode converter is measured and compared with single TWEAM (without converter) with optical wavelength of from 1550nm to 1570nm. The average optical insertion loss of about 4dB is found. The maximum extinction-ratio is about 21dB with modulation efficiency of 21dB/V, E-O response about 12GHz of ¡V3dB bandwidth at 50£[ termination is demonstrated.
7

A Comparison and Outline of Tolerances in Performing Optical Time Division Multiplexing using Electro-Absorption Modulators

Owsiak, Mark 18 May 2010 (has links)
As high bandwidth applications continue to emerge, investigation in technologies that will increase transmission capacity become necessary. Of these technologies, Optical Time Division Multiplexing (OTDM) has been presented as a possible solution, supporting a next generation bit rate of 160 Gbit/s. To perform the demultiplexing task, the use of tandem electro-absorption modulators (EAMs) has been widely studied, and due to its benefits was chosen as the topology of this thesis. To create an effective model of an OTDM system, the vector based mathematical simulation tool MatLab is used. Care was taken to create an accurate representation of an OTDM system, including: the development of a realistic pulse shape, the development of a true pseudo-random bit sequence in all transmitted channels, the optimization of the gating function, and the representation of system penalty. While posing impressive bit rates, various sources of system performance degradation pose issues in an OTDM system, owning to its ultra-narrow pulse widths. The presence of dispersion, timing jitter, polarization mode dispersion, and nonlinear effects, can sufficiently degrade the quality of the received data. This thesis gives a clear guideline to the tolerance an OTDM system exhibits to each of the aforementioned sources of system penalty. The theory behind each impairment is thoroughly discussed and simulated using MatLab. From the simulated results, a finite degree of sensitivity to each source of system penalty is realized. These contributions are of particular importance when attempting to implement an OTDM system in either the laboratory, or the field. / Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2010-05-17 22:51:56.471
8

Radio over fiber for 3G cellular System

Prasad, Saurabh January 2010 (has links)
The demand for bandwidth is increasing vigorously. Thus wired network is using fiber optic telephone line instead of coaxial cable. The concept of Fiber to the Home (FTTH) is really coming into picture. Few countries like Japan, Korea etc are leading in this technology. But now the major challenge is how to provide the high speed internet connection wirelessly. Thus the change is to integrate the wireless and optical fiber communication. / Wireless Optical Communication
9

Ressoadores WGM baseados em grafeno como plataforma para moduladores de eletro-absorção / Graphene-based WGM resonator as a plataform for electroabsorption modulators

Neves, Daniel Marchesi de Camargo 15 May 2015 (has links)
O objetivo deste trabalho é investigar a aplicação ressoadores WGM (Whispering-Gallery Mode) em plataforma SOI (silicon-on-insulator) baseados em grafeno como candidatas potenciais para aplicações como moduladores de eletro-absorção. O grafeno apresenta variação de condutividade considerável quando submetido a uma aplicação de tensão, o que reflete na parte imaginária de seu índice de refração (relacionada às perdas de propagação). Com isso, é possível atribuir estados ligado e desligado (on-off) que conferem ao dispositivo sua característica de modulação óptica. A geometria utilizada é do tipo anel, o que permite uma elevada seletividade em frequência possibilitando, assim, uma grande profundidade de modulação. As simulações foram realizadas no software de elementos finitos COMSOL Multiphysics, o qual é bastante apropriado para a definição das diferentes figuras de mérito a serem utilizadas para a caracterização do desempenho do modulador. / The goal of this work is to investigate SOI (silicon on insulator) WGM (Whispering-Gallery Modes) resonators based on graphene as potential candidates for electro-absorption modulator applications. Graphene conductivity varies substantially when submitted to an applied voltage, which reflects directly in the imaginary part of its refractive index (responsible for the propagation losses). Therefore, it is possible to assign on-off states that render the device its optical modulation characteristics. The geometry adopted for the design is the ring type, which allows high frequency selectivity and modulation depth. The simulations were carried out in the finite elements software COMSOL Multiphysics, which is quite appropriate for the definition of the different figure of merits to be used in the modulator characterization.
10

Ressoadores WGM baseados em grafeno como plataforma para moduladores de eletro-absorção / Graphene-based WGM resonator as a plataform for electroabsorption modulators

Daniel Marchesi de Camargo Neves 15 May 2015 (has links)
O objetivo deste trabalho é investigar a aplicação ressoadores WGM (Whispering-Gallery Mode) em plataforma SOI (silicon-on-insulator) baseados em grafeno como candidatas potenciais para aplicações como moduladores de eletro-absorção. O grafeno apresenta variação de condutividade considerável quando submetido a uma aplicação de tensão, o que reflete na parte imaginária de seu índice de refração (relacionada às perdas de propagação). Com isso, é possível atribuir estados ligado e desligado (on-off) que conferem ao dispositivo sua característica de modulação óptica. A geometria utilizada é do tipo anel, o que permite uma elevada seletividade em frequência possibilitando, assim, uma grande profundidade de modulação. As simulações foram realizadas no software de elementos finitos COMSOL Multiphysics, o qual é bastante apropriado para a definição das diferentes figuras de mérito a serem utilizadas para a caracterização do desempenho do modulador. / The goal of this work is to investigate SOI (silicon on insulator) WGM (Whispering-Gallery Modes) resonators based on graphene as potential candidates for electro-absorption modulator applications. Graphene conductivity varies substantially when submitted to an applied voltage, which reflects directly in the imaginary part of its refractive index (responsible for the propagation losses). Therefore, it is possible to assign on-off states that render the device its optical modulation characteristics. The geometry adopted for the design is the ring type, which allows high frequency selectivity and modulation depth. The simulations were carried out in the finite elements software COMSOL Multiphysics, which is quite appropriate for the definition of the different figure of merits to be used in the modulator characterization.

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