This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.

Decades of efforts have pushed the replacement of electrical interconnects by optical links to the interconnects between computers, racks and circuit boards. It may be expected that optical solutions will further be used for inter-chip and intra-chip interconnects with potential benefits in bandwidth, capacity, delay, power consumption and crosstalk. Silicon integration is emerging to be the best candidate nowadays due to not only the dominant status of silicon in microelectronics but also the great advantages brought to the photonic integrated circuits (PICs). Regarding the recent breakthroughs concerning active devices on silicon substrate, the question left is no longer the feasibility of the optical interconnects based on silicon but the competitiveness of the silicon device compared with other alternatives. This thesis focuses on the study of two key components for the optical interconnects, both especially designed and fabricated for silicon platform. One is a high speed electroabsorption modulator (EAM), realized by transferring an InP-based segmented design to the hybrid silicon evanescent platform. The purpose here is to increase the speed of the silicon PICs to over 50  Gb/s or more. The other one is a high performance grating coupler, with the purpose to improve the optical interface between the silicon PICs and the outside fiber-based communication system. An general approach based on the transmission line analysis has been developed to evaluate the modulation response of an EAM with a lumped, traveling-wave, segmented or capacitively-loaded configuration. A genetic algorithm is used to optimize its configuration. This method has been applied to the design of the EAMs on hybrid silicon evanescent platform. Based on the comparison of various electrode design, segmented configuration is adopted for the target of a bandwidth over 40 GHz with as low as possible voltage and high extinction ratio. In addition to the common periodic analysis, the grating coupler is analyzed by the antenna theory assisted with an improved volume-current method, where the directionality of a grating coupler can be obtained analytically. In order to improve the performance of the grating coupler, a direct way is to address its shortcoming by e.g. increasing the coupling efficiency. For this reason, a nonuniform grating coupler with apodized grooves has been developed with a coupling efficiency of 64%, nearly a double of a standard one. Another way is to add more functionalities to the grating coupler. To do this, a polarization beam splitter (PBS) based on a bidirectional grating coupler has been proposed and experimentally demonstrated. An extinction ratio of around -20 dB, as well as a maximum coupling efficiency of over 50% for both polarizations, is achieved by such a PBS with a Bragg reflector underneath. / QC 20100906

Les formats de modulation avancés, codant l’information sur la phase, la polarisation ou plusieurs niveaux d’amplitude de la lumière reçoivent aujourd’hui un intérêt croissant. En effet, ceux-ci permettent d’atteindre une meilleure efficacité spectrale et par conséquent des débits plus élevés. Ces caractéristiques sont actuellement très recherchées dans les télécommunications pour répondre à la demande constante d’augmentation de capacité des transmissions optiques fibrées. L’essentiel du travail effectué porte sur la génération de tels signaux dans des sources photoniques monolithiques sur InP faisant appel à un concept nouveau de commutation de phases optiques préfixées avec des modulateurs électro-absorbants. Une comparaison de notre technologie intégrée avec la technologie actuelle de génération de formats de modulation avancés démontre des possibilités nouvelles de réduction de taille, de diminution de consommation énergétique et d’évolution en vitesse de modulation jusqu’à 56 GBauds. Suite à la validation, par simulations, d’architectures de transmetteurs spécifiques pour la génération de formats de modulation avancés, nous réalisons en salle blanche les circuits photoniques intégrés d’étude. Les caractérisations statiques confirment le fonctionnement de toutes les fonctions intégrées des circuits et soulignent l’efficacité de la filière technologique. Pour une première démonstration de fonctionnalité nous choisissons un transmetteur BPSK capable de générer une modulation de phase à 12,4 GB. Ce résultat démontre la plus petite source intégrée BPSK à l’heure actuelle. Un autre circuit capable de générer des formats de modulation plus complexes est aussi caractérisé / Advanced modulation formats, encoding data on the phase, polarization or multi-level intensity of the light are currently a hot topic in the telecommunication domain. By using them, high spectral efficiency and therefore higher bit rate signals could be generated. Those characteristics are really attractive for the telecommunication systems manufacturers in order to answer to the constant need of increased bandwidth in fiber optic communications. The study of advanced modulation formats generation in Photonic Integrated Circuits (PICs) based on a new concept of preset phases switching by Electro-Absorption Modulators is the main task of the current work. Compared to the actual technology used for generate advanced modulations, our choice could allow a strong reduction of the dimensions and of the energy consumption of the transmitter as well as bit rate up to 56 GB. After validating specific transmitters’ architectures by simulations, we fabricated the studied photonic integrated circuits in clean room. Through static characterizations, we verify that all integrated functions of the transmitters are working and we show the efficiency of our technological choices. Using the available equipments at the lab, we prove the validity of our concept of EAM based phase switching by using a BPSK transmitter. A 12.4 GB BPSK modulation is obtained as well as a wide open eye diagram. This result demonstrates the smallest BPSK integrated photonic source at this time. Another photonic circuit able to generate more complex modulation formats is also measured

According to the 2018 Ethernet Roadmap projections, the requirements for high speed links keep increasing every year, always keeping an eye on the energy per bit consumption of the communication system. The Ethernet requirements are estimated to reach 1Tbps by 2022-2025. Optical links are one of the most concrete solutions to satisfy bandwidth requirements at low energy consumption. An optical link is a communication system that consists of a single end-to-end optical circuit. In contrast with vertical-cavity surface-emitting laser (VCSEL) technology, which is based on a direct laser modulation, silicon photonics technology (SPT) is based on indirect modulation. In order to perform the modulation, electro-optical modulators are needed in the optical link system for electrically modulating the optical power.This master thesis, developed at imec, will present the modeling of two different technologies of optical modulators: Silicon Ring Modulator and the Franz-Keldysh ElectroAbsorption Modulator. The work was initiated, since there were no available models of these devices in the actual framework for link analysis. First a preliminary study of the physical principles of the two devices was performed, in order to build the Matlab models. Then, these models were fitted with measurements, in order to adjust them to real-life behavior. After having obtained two working models of the two modulators, an alreadyexisting framework was used, to compare the energy consumption per bit in the optical link. However, the results obtained with the simulation didn’t highlight a technology to be preferred to the other. / Enligt prognoserna från Ethernet Roadmap 2018 fortsätter kraven på höghastighetslänkar att öka varje år och håller alltid ett öga på kommunikationssystemets energi konsumtion per bit. Ethernet-kraven beräknas nå 1Tbps 2022-2025.Optiska länkar är en av de mest konkreta lösningarna för att tillgodose bandbreddskrav vid låg energiförbrukning. En optisk länk är ett kommunikationssystem som utgör en punkt till punkt förbunden optisk krets. I motsats till teknik som utnyttjar den vertikala kavitetsytemitterande lasern (VCSEL), som bygger på en direkt lasermodulering, baseras kisel fotonikteknik (SPT) på indirekt modulering. För att utföra en modulering behövs elektrooptiska modulatorer i det optiska länksystemet för att elektriskt modulera den optiska effekten.Denna masteruppsats, utvecklad vid imec, kommer att presentera modelleringen av två olika teknologier av optiska modulatorer: Silicon Ring Modulatorn och Franz-Keldysh Electro Absorption Modulator. Arbetet, genomfördes eftersom det inte fanns några tillgängliga modeller av dessa enheter i själva ramverket för länkanalys. För det första genomfördes en preliminär studie av de två enheternas fysikaliska principer för att bygga Matlab-modellerna. Sedan jämfördes dessa modeller med mätningar för att anpassa dem till verkligt beteende. Efter att ha fått två arbetsmodeller av de två modulatorerna användes ett redan existerande ramverk för att jämföra energikonsumtionen per bit i den optiska länken. De resultat som erhölls med simuleringen indikerade emellertid inte någon teknik som skulle föredras framför den andra.

Cette thèse est consacrée à l’étude des propriétés optiques et optoélectroniques autour de la bande interdite directe des structures à puits quantiques Ge/SiGe pour la modulation, la photodétection et l’émission de lumière sur la plateforme silicium. Les principaux composants réalisés sont : un modulateur optique en guide d’onde, rapide et à faible puissance électrique, basé sur l’Effet Stark Confiné Quantiquement, les premières photodiodes Ge/SiGe dont le comportement fréquentiel est compatible avec les transmissions de données à 40 Gbit/s, et la première diode à électroluminescence à puits quantiques Ge/SiGe, base sur la transition directe de ces structures et fonctionnant à température ambiante. Les caractérisations statiques et fréquentielles ont été réalisées sur l’ensemble des composants, qui ont tous été fabriqués avec la même structure épitaxiée et les mêmes procédés de fabrication. Des modèles théoriques simples ont ensuite été utilisés pour décrire analyser les comportements observés. Finalement les études menées permettent de conclure que les structures à puits quantiques Ge/SiGe sont un candidat de choix pour la réalisation d’une nouvelle plateforme photonique à haut débit, totalement compatible avec les technologies silicium. / This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.