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Determining band bending of GaN by using contactless Electroreflectance spectroscopy

Using contactless Electroreflectance spectroscopy to determine the face terminate of GaN.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629105-165122
Date29 June 2005
CreatorsChang, Chia-Hsuan
ContributorsLi-Wei Du, Yan-Ten Lu, Dong-Po Wang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629105-165122
Rightsunrestricted, Copyright information available at source archive

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