This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry. Replacing the silicon channel with an ultra-thin epitaxial germanium layer grown selectively on a silicon (100) bulk wafer is examined in detail. The gate oxide chosen for the germanium devices is a high-k gate oxide, HfO2, and the gate electrode is a metal gate, tantalum-nitride. They demonstrate large improvements in drive current and mobility over identically processed silicon PMOSFETs. In addition to the planar germanium PMOSFETs, a process has been developed for 50nm and smaller germanium P-finFETs and N and P germanium tunnel-FETs. The patterning of sub-30nm wide and 230nm tall three dimensional fins has been done with electron beam lithography and dry plasma etching. The processes to deposit high-k gate oxide and metal gates on the sub-30nm wide fins have been developed. All that remains for the production of these devices is electron beam lithography with a maximum misalignment error of 40nm. / text
Identifer | oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/18388 |
Date | 16 October 2012 |
Creators | Donnelly, Joseph Patrick, 1965- |
Source Sets | University of Texas |
Language | English |
Detected Language | English |
Format | electronic |
Rights | Copyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works. |
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