Return to search

Characterization and reliability of HFO₂ and hfsion gate dielectrics with tin metal gate

Not available / text

Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2255
Date28 August 2008
CreatorsKrishnan, Siddarth A.
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis, text
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

Page generated in 0.0019 seconds