High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device

Description

Not available / text

Links & Downloads

1. b66061192
2. http://hdl.handle.net/2152/2826
3. 163973699

Tags

Hafnium oxide

Dielectrics

Gate array circuits

Additional Fields

Identifer	oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2826
Date	28 August 2008
Creators	Lu, Nan
Source Sets	University of Texas
Language	English
Detected Language	English
Type	Thesis
Format	electronic
Rights	Copyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.