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Evaluation of nitrogen incorporation effects in HfO₂ gate dielectric for improved MOSFET performance

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/12126
Date08 July 2011
CreatorsCho, Hag-ju, 1969-
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works., Restricted

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