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The investigation of near field couplings between circuit elements on dielectric boards /Kwok, Sai Kit. January 2005 (has links) (PDF)
Thesis (Ph. D.)--City University of Hong Kong, 2005. / "Submitted to Department of Electronic Engineering in partial fulfillment of the requirements for the degree of Doctor of Philosophy." Includes bibliographical references (leaves 115-128).
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Gate current modeling through high-k materials and compact modeling of gate capacitanceMudanai, Sivakumar Panneerselvam 28 March 2011 (has links)
Not available / text
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The effects of post-ash cleaning and chemical treatments on the dielectric properties and reliability of Cu/low-k interconnect structuresBorthakur, Swarnal. Ho, P. S. January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Paul S. Ho. Vita. Includes bibliographical references.
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Modeling of integrated circuit interconnect dielectric reliability based on the physical design characteristicsHong, Changsoo. January 2006 (has links)
Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007. / Linda Milor, Committee Chair ; Gary May, Committee Member ; Russell Dupuis, Committee Member ; Sung-Kyu Lim, Committee Member ; Mei-Yin Chou, Committee Member.
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Elucidation of levels of bacterial viability post-non-equilibrium dielectric barrier discharge plasma treatment /Cooper, Moogega. Fridman, Alexander A., January 2009 (has links)
Thesis (Ph.D.)--Drexel University, 2009. / Includes abstract and vita. Includes bibliographical references (leaves 110-122).
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Novel high-K gate dielectric engineering and thermal stability of critical interface /Mao, Yu-lung, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 212-225). Available also in a digital version from Dissertation Abstracts.
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Amorphous InGaZnO thin-film transistor with La-based high-k gate dielectricQian, Lingxuan, 钱凌轩 January 2014 (has links)
In general, La-based high-k gate dielectric owns superior properties to offer transistor excellent characteristics. Thus, amorphous InGaZnO thin-film transistor with La-based high-k gate dielectric has been investigated in this thesis. Different approaches have been adopted to improve the device performance.
First of all, the influence of gate-dielectric annealing in oxygen for different times on the device characteristics of the amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been investigated. It is demonstrated that this annealing treatment can effectively suppress the negative oxide charges. Moreover, it is discovered that this annealing treatment can suppress the acceptor-like border and interface traps. Accordingly, a high saturation carrier mobility of 35.2 〖cm〗^2/V∙s is achieved for the 30’-annealed device. Then, the effects of dielectric-annealing gas (O2, N2 and NH3) for a fixed annealing time of 10 min on the device characteristics are studied, and improvements by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 〖cm〗^2/V∙s, the lowest subthreshold swing of 0.206 V/dec and a negligible hysteresis. On the contrary, the O2-annealed sample shows poorer performance due to a decrease of electron concentration in InGaZnO. Furthermore, the NH3-annealed sample displays the lowest threshold voltage (1.95 V) due to increased gate-oxide capacitance and generated positive oxide charges.
Next, the effects of fluorine incorporation in amorphous InGaZnO by ion implant on the characteristics of InGaZnO thin-film transistor have been investigated. The electrical characteristics can be improved by this treatment due to increase of carrier concentration and passivation of defects in the InGaZnO film. Consequently, the saturation carrier mobility can be increased to 34.0 〖cm〗^2/V∙s, and the output current can be nearly doubled. However, device degradation is observed for very high fluorine dose above 1.0×1015 /〖cm〗^2. Then, another method for fluorine incorporation has been studied by treating the amorphous InGaZnO film in a CHF3/O2 plasma. The saturation carrier mobility can be improved to as high as 39.8 〖cm〗^2/V∙s.
Then, a new high-k material is proposed by investigating the effects of Ta incorporation in the La2O3 gate dielectric of amorphous InGaZnO thin-film transistor. Since the Ta incorporation is found to effectively enhance the moisture resistance of the La2O3 film, both the dielectric roughness and trap density at/near the InGaZnO/dielectric interface can be reduced, resulting in a significant improvement in the electrical characteristics of the device. Nevertheless, excessive incorporation of Ta can degrade the device characteristics due to newly-generated Ta-related traps. Finally, the proposed TaLaO is compared with Ta2O5 as the gate dielectric of amorphous InGaZnO thin-film transistor. It is found that the electrical characteristics of the device can be effectively improved by the incorporation of La in the Ta2O5 gate dielectric, which is ascribed to the fact that La incorporation can enlarge the band gap of Ta oxide and its conduction-band offset with InGaZnO, and also reduce the trap densities in the Ta2O5 gate dielectric and at the InGaZnO/gate-dielectric interface. / published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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Radiation-induced desorption and surface modification in dielectric single crystal materialsKjelgaard, Khin, January 2004 (has links) (PDF)
Thesis (Ph. D.)--Washington State University. / Includes bibliographical references.
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Barium strontium titanate thin film capacitors for high-density memories /Balu, Venkatasubramani, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 131-147). Available also in a digital version from Dissertation Abstracts.
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Bearing failure detection in farm machinery using low-cost acoustic techniques /Worley, Stacy K., January 1994 (has links)
Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Vita. Abstract. Includes bibliographical references (leaves 63-64). Also available via the Internet.
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