In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To inverstigate the properties of silicon Dioxide, we have done different physical and chemical test, including AES,TEM,FTIR,P-etch rate. We used the high frequency C-V curve to study the interface properties. The leakage current help to clarify the film quality. Moreover, we also discuss the growth mechanism in order to more understanding of LPD method.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0801100-153109 |
| Date | 01 August 2000 |
| Creators | Chen, Chien-An |
| Contributors | Hsieh, K. Y., Mau-Phon Houng, Huang, Huey-Liang, Bae-Heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801100-153109 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.002 seconds