Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7¡Ñ104 £[-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7¡Ñ10-4 £[-cm and 85%. On the other hand, the maximum leakage current of less than 1¡Ñ10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
For a 20£gm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3¡Ñ106 and 1.56 V/decade, respectively.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0616108-221511 |
| Date | 16 June 2008 |
| Creators | Hung, Chu-Yin |
| Contributors | Miau-Ju Chuang, Mei-Ying Chang, Ting-Chang Chang, Ann-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616108-221511 |
| Rights | campus_withheld, Copyright information available at source archive |
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