In this thesis, we will try to grow m-plane InGaN blue light-emitting diodes (LEDs) and discuss the characteristics. First, pure m-plane GaN on the m-sapphire grown by plasma assisted molecular beam epitaxy (PAMBE) had been achieved. ¢½/¢» ratio and the growth temperature are the most important factors in the growth sequence. M-GaN film with better crystal quality was grown successfully by tuning these two factors.
Indium composition in the InGaN layer is an important issue in the growth of blue LEDs; In/Ga ratio could affect the bandgap i.e. the target wavelength of a LED. We have to regard the crystal quality and the target wavelength of the InGaN layer in growth procedure.
Structural properties were investigated by X-ray diffraction (XRD). XRD measurements showed that the crystal orientation of GaN films was pure m-plane. From cathodoluminescence (CL) spectra, the luminescence wavelength of InGaN layer is in the blue-light range.
The crysatalline of m-plane InGaN blue LEDs were analyzed by XRD and Electron Back-Scattered Diffraction (EBSD). Electroluminescence (EL) was measured under the different inject current conditions; the polarization of EL was also measured. Moreover, the current-voltage curve and current-output curve were carried out.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0822110-021933 |
| Date | 22 August 2010 |
| Creators | Liang, Ting-wei |
| Contributors | Yung-Sung Chen, Min-Hsiung Tsai, Der-Jun Jang, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822110-021933 |
| Rights | not_available, Copyright information available at source archive |
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