Approved for public release, distribution is unlimited / In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements. / Civilian, Department of Air Force
| Identifer | oai:union.ndltd.org:nps.edu/oai:calhoun.nps.edu:10945/1574 |
| Date | 06 1900 |
| Creators | Hoang, Vu Dinh |
| Contributors | Haegel, Nancy M., Powers, John P., Department of Electrical and Computer Engineering |
| Publisher | Monterey California. Naval Postgraduate School |
| Source Sets | Naval Postgraduate School |
| Detected Language | English |
| Type | Thesis |
| Format | xvi, 55 p. : ill. (some col.), application/pdf |
| Rights | This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, may not be copyrighted. |
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