Return to search

Ultra High Speed InP Heterojunction Bipolar Transistors

<p>This thesis deals with the development of high speed InPmesa HBT’s with power gain cut—off frequencies up toand above 300 GHz, with high current density and low collectordischarging times.</p><p>Key developments are Pd—based base ohmics yielding basecontact resistances as low as 10 Ωµm<sup>2</sup>, base—collector grades to enable to use ofInP in the collector, and an increase in the maximum currentdensity through collector design and thermal optimization.HBT’s with a linear doping gradient in the base are forthe first time reported and compared to HBT’s with abandgap graded base. The effect of degenerate base doping issimulated, as well as the base transit time.</p><p>Key results include a DHBT with a 215 nm thick collector andan f<sub>τ</sub>= 280GHz, and f<sub>max</sub>=400 GHz. This represents the highest f<sub>max</sub>reported for a mesa HBT. Results also include aDHBT with a 150 nm thick collector and an f<sub>τ</sub>= 300 GHz, and f<sub>max</sub>=280 GHz. The maximum operating current densityhas been increased to above 10 mAµm while maintaining f<sub>τ</sub>and f<sub>max</sub>≥ 200 GHz.</p><p>A mesa DHBT process with and as much yield and simplicity aspossible has been developed, while maintaining or pushingworld—class performance.</p>

Identiferoai:union.ndltd.org:UPSALLA/oai:DiVA.org:kth-3527
Date January 2003
CreatorsDahlström, Mattias
PublisherKTH, Microelectronics and Information Technology, IMIT, Kista : Mikroelektronik och informationsteknik
Source SetsDiVA Archive at Upsalla University
LanguageEnglish
Detected LanguageEnglish
TypeDoctoral thesis, monograph, text

Page generated in 0.0017 seconds