The objective of this research is to design, fabricate, and demonstrate a microfabricated
monolithic ion trap for applications in quantum computation and quantum simulation.
Most current microfabricated ion trap designs are based on planar-segmented surface electrodes.
Although promising scalability to trap arrays containing ten to one hundred ions,
these planar designs suffer from the challenges of shallow trap depths, radial asymmetry of
the confining potential, and electrode charging resulting from laser interactions with dielectric
surfaces. In this research, the design, fabrication, and testing of a monolithic
and symmetric two-level ion trap is presented. This ion trap overcomes the challenges of
surface-electrode ion traps. Numerical electrostatic simulations show that this symmetric
trap produces a deep (1 eV for 171Yb+ ion), radially symmetric RF confinement potential.
The trap has an angled through-chip slot that allows back-side ion loading and generous
through laser access, while avoiding surface-light scattering and dielectric charging that
can corrupt the design control electrode compensating potentials. The geometry of the trap
and its dimensions are optimized for trapping long and linear ion chains with equal spacing
for use with quantum simulation problems and quantum computation architectures.
| Identifer | oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/47597 |
| Date | 26 March 2013 |
| Creators | Shaikh, Fayaz A. |
| Publisher | Georgia Institute of Technology |
| Source Sets | Georgia Tech Electronic Thesis and Dissertation Archive |
| Detected Language | English |
| Type | Dissertation |
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