Return to search

An evaluation of the electrical, material, and reliability characteristics and process viability of ZrO₂ and ZrOxNy for future generation MOS gate dielectric

Not available / text

Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/816
Date28 August 2008
CreatorsNieh, Renee Elizabeth
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

Page generated in 0.0019 seconds