Yes / This paper proposes a new solution to improve the performance parameters of on-chip antenna designs on standard CMOS silicon (Si.) technology. The proposed method is based on applying the metasurface technique and exciting the radiating elements through coupled feed mechanism. The on-chip antenna is constructed from three layers comprising Si.-GND-Si. layers, so that the ground (GND) plane is sandwiched between two Si. layers. The silicon and ground-plane layers have thicknesses of 20μm and 5μm, respectively. The 3×3 array consisting of the asterisk-shaped radiating elements has implemented on the top silicon layer by applying the metasurface approach. Three slot lines in the ground-plane are modelled and located directly under the radiating elements. The radiating elements are excited through the slot-lines using an open-circuited microstrip-line constructed on the bottom silicon layer. The proposed method to excite the structure is based on the coupled feeding mechanism. In addition, by the proposed feeding method the on-chip antenna configuration suppresses the substrate losses and surface-waves. The antenna exhibits a large impedance bandwidth of 60GHz from 0.5THz to 0.56THz with an average radiation gain and efficiency of 4.58dBi and 25.37%, respectively. The proposed structure has compact dimensions of 200×200×45μm3. The results shows that, the proposed technique is therefore suitable for on-chip antennas for applications in system-on-chip for terahertz (THz) integrated circuits. / Innovation programme under grant agreement H2020-MSCA-ITN-2016 SECRET-722424; UK Engineering and Physical Sciences Research Council (EPSRC) under grant EP/E0/22936/1.
| Identifer | oai:union.ndltd.org:BRADFORD/oai:bradscholars.brad.ac.uk:10454/18114 |
| Date | 10 December 2019 |
| Creators | Alibakhshikenari, M., Virdee, B.S., See, C.H., Abd-Alhameed, Raed, Falcone, F., Limiti, E. |
| Source Sets | Bradford Scholars |
| Language | English |
| Detected Language | English |
| Type | Conference paper, Accepted manuscript |
| Rights | (c) 2019 IEEE. Full-text reproduced in accordance with the publisher's self-archiving policy. |
Page generated in 0.002 seconds