Before 1971, all the electronics were based on three basic circuit elements. Until a professor from UCBerkeley reasoned that another basic circuit element exists, which he called memristor; characterized bythe relationship between the charge and the flux-linkage. A memristor is essentially a resistor withmemory. The resistance of a memristor (memristance) depends on the amount of current that is passingthrough the device. In 2008, a research group at HP Labs succeeded to build an actual physical memristor. HP's memristorwas a nanometer scale titanium dioxide thin film, composed of two doped and undoped regions,sandwiched between two platinum contacts. After this breakthrough, a huge amount of research startedwith the aim of better realization of the device and discovering more possible applications of thememristor. In this report, it is attempted to cover a proper amount of information about the history, introduction,implementation, modeling and applications of the device. But the main focus of this study is onmemristor modeling. Four papers on modeling of the memristor were considered, and since there wereno cadence models available in the literature at the time, it was decided to develop some cadencemodels. So, cadence models from the mentioned papers were designed and simulated. From the samemodeling papers some veriloga models were written as well. Unfortunately, due to some limitation of thedesign tool, some of the models failed to provide the expected results, but still the functioning modelsshow satisfactory results that can be used in the circuit simulations of memristors.
Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-112930 |
Date | January 2014 |
Creators | Keshmiri, Vahid |
Publisher | Linköpings universitet, Elektroniksystem, Linköpings universitet, Tekniska högskolan |
Source Sets | DiVA Archive at Upsalla University |
Language | English |
Detected Language | English |
Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
Format | application/pdf |
Rights | info:eu-repo/semantics/openAccess |
Relation | LiTH-ISY-Ex ; 10/4455 |
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