One of two project reports: The other part is designated PART B:
OFF-CAMPUS PROJECT. / <p> Ion implantation is investigated as a technique to fabricate
solar cells on monocrystalline silicon. The electrical properties
of the implanted layer, as determined using the Hall Effect, and solar
cell performance have beep studied for varying implant species
(As and P), implanted dopant concentration (10^18 - 10^21 cm^-3),
implanted substrate temperature (55° to 300°K} and annealing
temperature (700° to 900°C). Some progress has been made toward
the optimization of the various parameters. </p> / Thesis / Master of Engineering (MEngr)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/20387 |
| Date | 04 1900 |
| Creators | Vanderwel, Theodore |
| Contributors | Shewchun, J., Engineering Physics |
| Source Sets | McMaster University |
| Language | English |
| Detected Language | English |
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