The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods. XRD is used to analyze the In composition of film. PL, £g-PL, and CL are used to study the luminescence of InGaN and GaN, and calculation of In composition. For nanorods, the TEM and EDS are the tools to study the In composition and InGaN thickness. SEM is used to study the sample morphology. The work of EL has also been done in this thesis.
Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726106-145613 |
Date | 26 July 2006 |
Creators | Tu, Yen-Jie |
Contributors | Li-Wei Tu, Chie-Tong Kuo, Der-Jun Jang, Tsu-Chiang Yen, Shiow-Fon Tsay |
Publisher | NSYSU |
Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
Language | Cholon |
Detected Language | English |
Type | text |
Format | application/pdf |
Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726106-145613 |
Rights | not_available, Copyright information available at source archive |
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