This diploma thesis is focused on deposition Ga and GaN structures on graphene fabricated by method of mechanical exfoliation. For mechanical exfoliation was used new method with using DGL Gel-Film with kinetically controlled adhesion. Ga is deposited by Molecular beam epitaxy with using eusion cell in UHV conditions. GaN was obtained by post-nitridation of Ga islands. These structures were investigated with optical microscope, SEM, Raman spectroscopy and photoluminiscence.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:319287 |
| Date | January 2017 |
| Creators | Hammerová, Veronika |
| Contributors | Váňa, Rostislav, Mach, Jindřich |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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