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Transimpedance amplifier design using 0.18 um CMOS technology

This thesis examines the design of high speed transimpedance amplifiers (TIAs) in low cost complimentary metal oxide semiconductor (CMOS) technology. Due to aggressive scaling, CMOS has become an attractive technology for high speed analog circuits. Besides the cost advantage, CMOS offers the potential for higher levels of integration since the analog circuits can be integrated with digital electronics on the same substrate.

A 2.5 Gbps transimpedance amplifier fabricated using 0.18 um CMOS technology is presented. The TIA uses a shunt-shunt feedback topology with a cascode gain stage. Measurements of the transimpedance gain, group delay, and common mode rejection ratio are presented for the TIA and show a good match to simulated results. The noise of the TIA was characterized by measuring the noise parameters of the TIA. The noise parameters are then used to determine the input referred noise current spectral density.

A 10 Gbps transimpedance amplifier fabricated using 0.18 um CMOS technology is also presented. This TIA uses a shunt-shunt feedback topology with a common source gain stage. In order to achieve the required bandwidth, the TIA uses a bandwidth extension technique called shunt-series inductive peaking. A discussion of the different methods of bandwidth extension using inductive peaking is included, and the optimal configurations for maximally
flat responses are shown for shunt inductive peaking,series inductive peaking, and shunt-series inductive peaking. The TIA circuit topology is optimized using a novel noise analysis that uses a high frequency noise model for the transistor. The optimum transistor size and bias current are determined to minimize the amplifier noise. Unfortunately differential measured results are not available due to a stability problem in the amplifier. The cause of this instability is further explored and modifications to solve the problem are discussed. Single-ended results are presented and show reasonable agreement with simulated results. Differences in the results are attributed to poor modelling of the on-chip spiral inductors. / Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2007-07-16 13:34:41.46

  1. http://hdl.handle.net/1974/452
Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:OKQ.1974/452
Date19 July 2007
CreatorsBespalko, Ryan Douglas
ContributorsQueen's University (Kingston, Ont.). Theses (Queen's University (Kingston, Ont.))
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
LanguageEnglish, English
Detected LanguageEnglish
TypeThesis
Format5418117 bytes, application/pdf
RightsThis publication is made available by the authority of the copyright owner solely for the purpose of private study and research and may not be copied or reproduced except as permitted by the copyright laws without written authority from the copyright owner.
RelationCanadian theses

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