The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion mode pHEMT and HBT. The combination of BiFET gives an additional degree of freedom in the design of advanced power amplifiers combine switch.
This dissertation provides an overview of the various techniques. Critical processes included gate photolithography and Polyimide planarize process are discussed in detail. The 0.5-£gm multiple gate fingers fabricated on the controllable small un-gated region of a high-topology wafer was overcome by using a bi-layer photolithography process. The fabricated of polyimide was used as the dielectric interlayer to reduce the interconnect crossover parasitic capacitance and planarize the second metal process for metal shunt application. The metal shunt structures provide greater functionality and design flexibility under shrinking. Finally, presents the combine the best features of InGaP HBT-pHEMT integration technology. The HBT and E/D-pHEMT electrical performances (DC, small signal, noise, and power) are presented. The results indicate that this technology offers great potential and degrees of freedom to design power amplifiers, high-integrated RF transceivers, and opportunities for the development of novel RFIC circuits.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0120110-165957 |
| Date | 20 January 2010 |
| Creators | Tu, Min-Chang |
| Contributors | Shui-Jinn Wang, Herng-Yih Ueng, Wei-Chou Hsu, Yu-Chi Wang, Shih-Ming Liu, Yeong-Her Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0120110-165957 |
| Rights | not_available, Copyright information available at source archive |
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