The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion mode pHEMT and HBT. The combination of BiFET gives an additional degree of freedom in the design of advanced power amplifiers combine switch. This dissertation provides an overview of the various techniques. Critical processes included gate photolithography and Polyimide planarize process are discussed in detail. The 0.5-£gm multiple gate fingers fabricated on the controllable small un-gated region of a high-topology wafer was overcome by using a bi-layer photolithography process. The fabricated of polyimide was used as the dielectric interlayer to reduce the interconnect crossover parasitic capacitance and planarize the second metal process for metal shunt application. The metal shunt structures provide greater functionality and design flexibility under shrinking. Finally, presents the combine the best features of InGaP HBT-pHEMT integration technology. The HBT and E/D-pHEMT electrical performances (DC, small signal, noise, and power) are presented. The results indicate that this technology offers great potential and degrees of freedom to design power amplifiers, high-integrated RF transceivers, and opportunities for the development of novel RFIC circuits.

The growth optimization and fabrication of 980nm quantum well (QW) lasers is presented. Photoluminescence (PL) spectroscopy is used to determine the optimized growth conditions for the QWs. The results are presented for optimization of both growth temperature and group V overpressure. Broad area lasers, with active regions grown at and around optimized QW growth conditions, are fabricated and characterized under pulsed conditions. These results are used to determine the optimum growth conditions for a ridge waveguide (RWG) laser structure. Once grown, RWG lasers are fabricated and characterized under continuous wave (CW) conditions. External quantum efficiencies as high as 71 % and cavity losses as low as 5.2 cm-1 are achieved. / Thesis / Master of Engineering (ME)

Šiuolaikiniai Si/SiGe, AlGaAs/GaAs bei InGaP/GaAs įvarialyčiai dvipoliai tranzistoriai (ĮDT) pasižymi dideliu informacijos perdavimo greičiu, dideliu signalo stiprinimu, žemu triukšmų lygiu ir mažu signalo iškraipymu. Disertaciniame darbe atlikti Si/SiGe ir InGaP/GaAs ĮDT aukštadažnių charakteristikų ir triukšmo tyrimai dažnių ruože nuo 1 iki 30 GHz naudojant ir voltamperines charakteristikas. Tranzistorių triukšmų modeliavimas atliktas atsižvelgiant į tranzistoriaus šratinio triukšmo šaltinių koreliaciją, smūginę jonizaciją, tranzistoriaus parametrų temperatūrines priklausomybes. Dvipolių tranzistorių analitinis modelis, išvestas naudojant π –tipo ekvivalentinę grandinę, buvo įdiegtas į dvipolių tranzistorių kompaktinį (sutelktų parametrų) modelį HICUM (angl. high current model). Ši kompaktinio modelio versija gali aprašyti bazės ir kolektoriaus srovių šratinio triukšmo šaltinių koreliaciją. Kambario temperatūroje smūginės jonizacijos sąlygotas SiGe ĮDT triukšmo parametrų kitimas buvo tirtas hidrodinaminiu, dreifo - difuzijos ir kompaktiniu HICUM modeliais, taikant Chynowetho smūginės jonizacijos dėsnį griūtinių srovių įvertinimui. SiGe ĮDT temperatūriniai voltamperinių, aukštadažnių ir triukšmo charakteristikų tyrimai atlikti plačiame aplinkos temperatūrų ruože 4 – 423 K. Tyrimai parodė, kad hidrodinaminis ir kompaktinis HICUM modeliai galioja tik 300 – 423K temperatūrų ruože. / Modern Si/SiGe, AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit high-speed and high-frequency operation, high gain, low noise and low signal distortion. This work deals with an investigation of DC, microwave and noise characteristics of Si/SiGe and InGaP/GaAs HBTs in the relevant frrequency range of 1-30 GHz. Noise simulation and modeling of HBTs have been performed including correlation of shot noise sources, impact ionization and temperature dependences. Analytical model for bipolar transistor, based on π- type equivalent circuit was derived and implemented in the bipolar transistor compact model HICUM. This compact model HICUM version includes correlation between base and collector current noise sources. The noise behavior resulting from impact ionization was investigated at room temperature for SiGe HBTs. Modeling was performed with a hydrodynamic model, drift - diffusion models and the compact model HICUM using a Chynoweth’s law for avalanche generation. DC, high frequency characteristics and noise of SiGe HBTs were investigated in a wide ambient temperature range 4 – 423 K Both hydrodynamic device simulation and compact model HICUM view agreement with experimental data only in the temperature range of 300 – 423K.

Modern Si/SiGe, AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit high-speed and high-frequency operation, high gain, low noise and low signal distortion. This work deals with an investigation of DC, microwave and noise characteristics of Si/SiGe and InGaP/GaAs HBTs in the relevant frrequency range of 1-30 GHz. Noise simulation and modeling of HBTs have been performed including correlation of shot noise sources, impact ionization and temperature dependences. Analytical model for bipolar transistor, based on π- type equivalent circuit was derived and implemented in the bipolar transistor compact model HICUM. This compact model HICUM version includes correlation between base and collector current noise sources. The noise behavior resulting from impact ionization was investigated at room temperature for SiGe HBTs. Modeling was performed with a hydrodynamic model, drift - diffusion models and the compact model HICUM using a Chynoweth’s law for avalanche generation. DC, high frequency characteristics and noise of SiGe HBTs were investigated in a wide ambient temperature range 4 – 423 K Both hydrodynamic device simulation and compact model HICUM view agreement with experimental data only in the temperature range of 300 – 423K. / Šiuolaikiniai Si/SiGe, AlGaAs/GaAs bei InGaP/GaAs įvarialyčiai dvipoliai tranzistoriai (ĮDT) pasižymi dideliu informacijos perdavimo greičiu, dideliu signalo stiprinimu, žemu triukšmų lygiu ir mažu signalo iškraipymu. Disertaciniame darbe atlikti Si/SiGe ir InGaP/GaAs ĮDT aukštadažnių charakteristikų ir triukšmo tyrimai dažnių ruože nuo 1 iki 30 GHz naudojant ir voltamperines charakteristikas. Tranzistorių triukšmų modeliavimas atliktas atsižvelgiant į tranzistoriaus šratinio triukšmo šaltinių koreliaciją, smūginę jonizaciją, tranzistoriaus parametrų temperatūrines priklausomybes. Dvipolių tranzistorių analitinis modelis, išvestas naudojant π –tipo ekvivalentinę grandinę, buvo įdiegtas į dvipolių tranzistorių kompaktinį (sutelktų parametrų) modelį HICUM (angl. high current model). Ši kompaktinio modelio versija gali aprašyti bazės ir kolektoriaus srovių šratinio triukšmo šaltinių koreliaciją. Kambario temperatūroje smūginės jonizacijos sąlygotas SiGe ĮDT triukšmo parametrų kitimas buvo tirtas hidrodinaminiu, dreifo - difuzijos ir kompaktiniu HICUM modeliais, taikant Chynowetho smūginės jonizacijos dėsnį griūtinių srovių įvertinimui. SiGe ĮDT temperatūriniai voltamperinių, aukštadažnių ir triukšmo charakteristikų tyrimai atlikti plačiame aplinkos temperatūrų ruože 4 – 423 K. Tyrimai parodė, kad hidrodinaminis ir kompaktinis HICUM modeliai galioja tik 300 – 423K temperatūrų ruože.

In dieser Forschungsarbeit wird das selbstorganisierte Wachstum von InP/InGaP-Quantenpunkten (QP) sowie ihre optischen und strukturellen Eigenschaften untersucht. Die QP wurden auf GaAsgitterangepasstem InGaP gewachsen.Selbstorganisierte InP-QP werden mittels Gasquellen-Molekularstrahlepitaxie gewachsen, wobei die InP-Abscheidungsrate uber einen weiten Bereich variiert wird. Bei besonders geringer Wachstumsratevon rund 0,01 Atomlagen/s wird eine Flachendichte von 1 QP/μm2 erreicht. Die daraus resultierenden InP QP, konnen einzeln charakterisiert werden ohne vorher das Substrat lithografisch behandeln zu mussen. Sowohl exzitonische als auch biexzitonische Emission kann dabei an einzelnen QPn als Doublett mit einer Feinstrukturaufspaltung von 320μeV beobachtet warden. Hanbury-Brown-Twiss Korrelationsmessungen der exzitonischen Emission unter Dauerstrichanregung zeigen Antibunching mit einem Autokorrelationskoeffizienten von g(2)(0)=0.2. Dieses System liee sich beispielsweise als Einzelphotonenquelle in Anwendungsbereichen wie der Quantenkryptographie einsetzen. Daruber hinaus wird die Bildung wohlgeordneter Quantenpunktketten auf GaAs (001)-Substraten unter Ausnutzung einer selbstorganisierten InGaP-Oberflachenwellung demonstriert. Diese Anordnung basiert weder auf gestapelten Quantenpunktschichten noch einem intentionalen Substratschragschnitt. Die Strukturen warden mittels polarisationsabhangiger Photolumineszenzspektroskopie sowie Transmissionselektronenmikroskopie untersucht. Die Lumineszenz der InGaP-Matrix ist in eine kristallografische Richtung polarisiert, bedingt durch anisotrope Verspannung, welche ihrerseits aus der lateralen Variation der Materialzusammensetzung entsteht. Photolumineszenzmessungen der QP zeigen eine lineare Polarisation entlang [-110], der Richtung der Ketten. Der Polarisationsgrad liegt bei 66%. Diese optische Anisotropie wird direkt in einer Heterostruktur hervorgerufen, die lediglich eine Quantenpunktschicht beinhaltet. / In this work the growth of self-assembled InP/InGaP quantum dots, as well as their optical and structural properties are presented and discussed. The QDs were grown on InGaP, lattice matched to GaAs.Self-assembled InP quantum dots are grown using gas-source molecular beam epitaxy over a wide range of InP deposition rates, using an ultra-low growth rate of about 0.01 atomic monolayers/s, a quantum-dot density of 1 dot/μm2 is realized. The resulting isolated InP quantum dots are individually characterized without the need for lithographical patterning and masks on the substrate. Both excitionic and biexcitonic emissions are observed from single dots, appearing as doublets with a fine-structure splitting of 320 μeV. Hanbury Brown-Twiss correlation measurements for the excitonic emission under cw excitation show anti-bunching behavior with an autocorrelation value of g(2)(0)=0.2. This system is applicable as a single-photon source for applications such as quantum cryptography. The formation of well-ordered chains of InP quantum dots on GaAs (001) substrates by using self-organized InGaP surface undulations as a template is also demonstrated. The ordering requires neither stacked layers of quantum dots nor substrate misorientation. The structures are investigated by polarization-dependent photoluminescence together with transmission electron microscopy. Luminescence from the InGaP matrix is polarized in one crystallographic direction due to anisotropic strain arising from a lateral compositional modulation. The photoluminescence measurements show enhanced linear polarization in the alignment direction of quantum dots, [-110]. A polarization degree of 66% is observed. The optical anisotropy is achieved with a straightforward heterostructure, requiring only a single layer of QDs.

This thesis presents studies on III-V semiconductor waveguides with particular emphasis on second-order optical nonlinearity. The nonlinear processes that were investigated in this thesis are the Second Harmonic Generation (SHG) and the Spontaneous Parametric Down-Conversion (SPDC). The optical waveguides are made of InGaP and the waveguide design includes tapered parts for in- and out-coupling of guided light. Simulation of light propagation and modal solutions were done using Lumerical MODE, FDTD, and COMSOL Multiphysics software. The in- and outcoupling for the design of tapered waveguide that utilize the bulk non-linearity is 65 % when the waveguide is 145 nm thick and 2.60 μm wide having PMMA as top cladding. The SHG conversion efficiency for this configuration when the waveguide length is 2 μm long, is found 31 %/W. Three cases of the utilization of the surface non-linearity are proposed too. Preliminary steps toward the fabrication of the waveguide structures are also reported. The particular mesa-isolated substrates are fabricated having a side wall with a negative angle profile that result to a significant undercut. InGaP waveguides were transferred to the target substrates successfully and the process that was used can enable heterogeneous integration of InGaP and SOI platform. / Denna avhandling presenterar studier av III-V-halvledarvågledare med särskild tonvikt på andra ordningens optisk olinjäritet. De olinjära processer som undersöktes i denna avhandling är SHG och SPDC. De optiska vågledarna är gjorda av InGaP och vågledardesignen inkluderar avsmalnande delar för in- och utkoppling av styrt ljus. Simulering av ljusutbredning och modala lösningar gjordes med Lumerical MODE, FDTD och COMSOL Multiphysics mjukvara. In- och utkopplingen för konstruktionen av avsmalnande vågledare som utnyttjar bulkolinjäriteten är 65 % när vågledaren är 145 nm tjock och 2,60 μm bred med PMMA som toppbeklädnad. SHGkonverteringseffektiviteten för denna konfiguration när vågledarlängden är 2 μm lång, är 31 %/W. Tre fall av utnyttjande av ytolinjäriteten föreslås också. Preliminära steg mot tillverkningen av vågledarstrukturerna rapporteras också. De speciella mesa-isolerade substraten är tillverkade med en sidovägg med en negativ vinkelprofil som resulterar i en betydande underskärning. InGaP-vågledare överfördes till målsubstraten framgångsrikt och processen som användes kan möjliggöra heterogen integration av InGaP och SOI-plattformen.

[pt] A célula solar de banda intermediária (IBSC) é um dispositivo de terceira geração alternativo à célula solar de junção única e permite atingir maior eficiência mantendo a simplicidade de ter apenas uma junção pn, garantindo baixo custo e baixa complexidade de fabricação. Nesta tese, um extenso trabalho experimental é apresentado, utilizando as técnicas de microscopia de força atômica, microscopia eletrônica de transmissão, catodoluminescência e fotoluminescência, além de extenso trabalho teórico baseado em simulações realizadas com os programas nextnano e SCAPS. Através dos dados obtidos, é discutida a escolha do InGaP para a matriz da célula solar e do InAs para os pontos quânticos; a inclusão das field damping layers, que minimizam o efeito negativo do campo elétrico sobre os pontos quânticos; o desordenamento do InGaP bulk; como pontos quânticos pequenos e com cap layers de menor espessura alteram a tendência de ordenamento das camadas subsequentes de InGaP; a inclusão de uma camada de GaP para garantir a qualidade das interfaces durante o crescimento da estrutura; e a otimização dos pontos quânticos para atingir a energia ideal teórica para a banda intermediária. Cinco estruturas completas de células solares de referência e de banda intermediária baseadas nas discussões apresentadas são então propostas para crescimento futuro. Estas estruturas de IBSC devem apresentar figuras de mérito interessantes, como VOC entre 1,32 eV e 1,44 eV (1; 2), aumento entre 5 por cento e 50 por cento na ISC (3) e baixos efeitos resistivos, garantindo FF alto e eficiências superiores à das células solares de referência. / [en] The intermediate band solar cell (IBSC), an alternative to the single junction solar cell, is a third generation device that achieves greater efficiency while maintaining the simplicity of having only one pn junction, guaranteeing low cost and low complexity to manufacture. In this thesis, an extensive experimental work is presented, using atomic force microscopy, transmission electron microscopy, cathodoluminescence and photoluminescence techniques, in addition to an extensive theoretical work based in simulations performed with nextnano and SCAPS softwares. Through the obtained data, the choice of InGaP for the solar cell matrix and InAs for the quantum dots; the inclusion of field damping layers to minimize the negative effect of the electric field on the quantum dots; the disordering of bulk InGaP; the way small quantum dots with thinner cap layers alter the ordering tendency of subsequent layers of InGaP; the inclusion of a GaP layer to ensure the interfaces’ quality during the structure s growth; and the quantum dots optimization to reach the intermediate band ideal theoretical energy are discussed. Five complete structures for reference and intermediate band solar cells based in the presented discussions are then proposed for future growth. These IBSC structures should present interesting figures of merit, such as a VOC ranging between 1,32 eV and 1,44 eV (1; 2), an increase between 5 per cent and 50 per cent in ISC (3) and low resistance effects, ensuring a high FF and efficiencies superior to the reference solar cells.

In this study, we add an additional layer above and under the CIGS absorber layer as a secondary absorption layer respectively. We made the conventional structure of ZnO/CdS/CIGS/Mo becomes the structure of ZnO/CdS/CIGS/InGaP/Mo and ZnO/CdS/InGaP/CIGS/Mo which can improve the conversion efficiency. And we translate the thickness proportion of Ga and the doping concentration to find out the best parameter. According to the simulation, the wavelength of EQE in 600 nm ~ 1200 nm for our proposed CIGS solar cell which the additional layer under CIGS layer has been improved when compared to the conventional CIGS solar cell. The short-circuit current density has been increased about 9 %. And the conversion efficiency has also been increased about 9 %.When the additional layer above the CIGS absorber layer, according to the simulation, the wavelength of EQE in 300 nm ~ 600 nm for our proposed CIGS solar cell is improved when compared with the conventional CIGS solar cell. The short-circuit current density has been improved about 7.7 %, the open-circuit voltage about 7.1 %, and the conversion efficiency about 20.6 %. The main reason is that when the InGaP absorption layer under the CIGS layer which can catch the light which can¡¦t be absorbed by CIGS layer. The InGaP absorption layer above the CIGS layer which can catch the light immediately.

Orientadores: Antonio Carlos Boschero, Kleber Luiz de Araujo e Souza / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Biologia / Made available in DSpace on 2018-08-13T04:48:49Z (GMT). No. of bitstreams: 1 Paula_FlaviaMariaMourade_M.pdf: 2651405 bytes, checksum: 255d59533f2d09ff678a30dd27fdc45f (MD5) Previous issue date: 2009 / Resumo: INGAP (Islet Neogenesis Associated Protein), um peptídeo primeiramente dentificado em hamsters, cujo pâncreas foi previamente embrulhado em papel celofane, tem como função principal induzir neogênese e diferenciação de células beta pancreáticas, além de melhorar a secreção de insulina induzida por glicose e aminoácidos. Existem poucas informações a respeito dos mecanismos intracelulares desencadeados pelo INGAP em células beta. Assim, este trabalho teve como objetivo estudar tais mecanismos em 2 linhagens de células beta pancreáticas produtoras de insulina, denominadas RINm5F e MIN6. Para isso foi utilizado o INGAP-PP (INGAP104-118) constituído por uma seqüência de 15 aminoácidos e que mantém as mesmas propriedades da molécula do INGAP. Durante o procedimento experimental foi realizado um "screening" dos elementos responsivos a alguns fatores de transcrição. A expressão de algumas proteínas como receptor muscarínico M3, p85, AKT, p70S6k, PCNA e NF?B foi analisada, assim como a secreção de insulina estimulada por glicose, a mobilização de cálcio intracelular e a medida de viabilidade celular. A exposição das células MIN6 ao INGAP-PP aumentou a secreção de insulina induzida por glicose assim como a mobilização intracelular de cálcio. INGAP-PP ativou os fatores de transcrição c-Myc, SRE e em especial o NF?B nas duas linhagens celulares. A viabilidade celular também foi aumentada nas células expostas ao INGAP-PP a qual foi acompanhada de aumento na expressão de PCNA, proteína diretamente relacionada com a progressão do ciclo celular. Ainda, a expressão protéica do receptor muscarínico M3 foi aumentada na presença de INGAP-PP. Esse efeito foi bloqueado pela pré-exposição das células a um inibidor farmacológico do NF?B. Pode-se concluir que a ativação moderada do c-Myc e o aumento na expressão de PCNA estão relacionados com o aumento na viabilidade celular. Adicionalmente, conclui-se que a ativação moderada do NF?B induzida pelo INGAP-PP controla direta ou indiretamente a expressão do receptor M3 e tal processo pode estar relacionado sinergicamente com o aumento na proliferação celular. / Abstract: The pentadecapeptide comprising the 104-118 aminoacid sequence of the ilotropin-derived Reg3- related islet neogenesis associated protein (INGA-PP) has been implicated in pancreatic beta-cell neogenesis and enhancement of the insulin secretion in pancreatic islets. There is little information regarding the mechanism of action of the polypeptide. The aim of this study was to investigate intracellular pathways by which INGAP-PP signs insulin-producing cells. The results show that INGAP-PP increased the insulin secretion and induced mobilization of intracellular calcium in MIN6 cells. INGAP-PP exposure activated c-Myc, serum response element (SRE) and particularly nuclear factor kappa B (NF?B) in both MIN6 and RINm5F insulin-producing cells. There was an increase in the proliferation rate of viable cells that was accompanied by an increase in the proliferating cell nuclear antigen (PCNA) protein expression following INGAP-PP treatment. In addition, INGAP-PP increased the expression of the muscarinic M3 receptor subtype. This effect was impaired by blocking NF?B signaling pathway. Cells incubated in the presence of foetal calf serum (FCS) also showed increased M3 receptor expression. In conclusion, these data show that activation of c-Myc signaling pathway and increased PCNA expression might be involved in the increased proliferation rate of insulin-producing cells following incubation with INGAP-PP. NF?B signaling plays an essential role in controlling the expression of the acetylcholine M3 receptor. / Mestrado / Fisiologia / Mestre em Biologia Funcional e Molecular

Orientador: Antonio Carlos Boschero / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Biologia / Made available in DSpace on 2018-08-11T18:52:08Z (GMT). No. of bitstreams: 1 Barbosa_HelenaCristinadeLima_D.pdf: 1532159 bytes, checksum: fe4c9ebe74242b72b674f100ed50b427 (MD5) Previous issue date: 2008 / Resumo: Islet Neogenesis Associated Protein (INGAP) aumenta a massa das células ß e potencializa a secreção de insulina induzida por glicose. Neste projeto, estudamos os efeitos de um pentadecapeptídeo contendo a seqüência 104 a 118 de aminoácidos do INGAP (INGAP-PP) sobre a expressão de genes das células insulares, expressão e fosforilação de componentes das vias PI3K e MAPK, sinalização colinérgica, bem como secreções dinâmica e estática de insulina, em ilhotas isoladas de ratos neonatos. Ilhotas cultivadas com INGAP-PP por 4 dias secretaram significativamente mais insulina em resposta a glicose, comparado às ilhotas controle. Análise do padrão da expressão, por macroarray, de ilhotas cultivadas com INGAP-PP, mostrou que de 2.352 genes fixados na membrana de nylon 210 apresentaram expressão aumentada e apenas 4 diminuída. Dentre os genes modulados positivamente pelo INGAP-PP vários estão relacionados com o metabolismo das células insulares, mecanismo de secreção de insulina, crescimento, maturação, manutenção da massa celular e exocitose. Exposição aguda de ilhotas neonatais ao INGAP-PP aumentou significativamente a fosforilação de Akt-Ser473 e ERK1/2-Thr202/Tyr204 bem como a secreção dinâmica de insulina frente a 2 e 20 mM de glicose. Ilhotas tratadas durante 4 dias com INGAP-PP também apresentaram aumento da expressão do receptor muscarínico M3 e da PLC-ß2. Essas ilhotas, quando expostas agudamente ao Cch tiveram fosforilação de P70S6K-Thr389 e ERK1/2 aumentada. Ainda, essas ilhotas secretaram mais insulina frente a estímulo colinérgico, comparado às ilhotas controle. Nossos resultados mostram que o INGAP-PP aumenta a secreção de insulina, a transcrição de vários genes importantes para a funcionalidade do pâncreas endócrino e a fosforilação de proteínas envolvidas nas vias PI3K e MAPK. O aumento da secreção de insulina bem como fosforilação de P70S6K e ERK1/2 pelo Cch sugere participação também da via colinérgica nos efeitos mediados pelo INGAP-PP. / Abstract: The Islet Neogenesis Associated Protein (INGAP) increases pancreatic ß-cell mass and potentiates glucose-induced insulin secretion. Here, we have studied the effects of the pentadecapeptide having the 104-118 amino acid sequence of INGAP (INGAP-PP) on the expression of genes related to the pancreatic islets, the expression and phosphorylation of components of the PI3K and MAPK pathways, the cholinergic signaling, and static and dynamic insulin secretion in neonatal rat islet. Islets cultured with INGAP-PP released significantly more insulin in response to glucose than controls. The macroarray analysis showed that 210 out of 2,352 genes, spotted in the nylon membranes, were up- ,regulated while only 4 were down-regulated by INGAP-PP-treatment. The main categories of genes modulated by INGAP-PP 4-days cultured islet include several genes related with islet metabolism, insulin secretion mechanism, growth, maturation, maintenance of islet-cell mass, and exocytosis. Shortterm exposure of neonatal islets to INGAP-PP significantly increased Akt-Ser473 and ERK1/2-Thr202/Tyr204 phosphorylation as well as insulin secretion from islets perifused with 2 and 20 mM glucose. Four-days cultured islets with INGAP-PP also showed increased expression of M3 receptor subtype and PLC-ß2 proteins. In addition, brief exposure of INGAP-PP-treated islets to Cch significantly increased P70S6KThr389 and ERK1/2 phosphorylation and these islets released more insulin when challenged with Cch. In conclusion, these data show that INGAP-PP enhances insulin secretion and transcription of several islet genes, and also increases the expression and phosphorylation of proteins involved in PI3K and MAPK pathways. The increased insulin secretion in response to Cch as well as P70S6K and ERK1/2 proteins phosphorylation, also suggest the participation of the cholinergic pathway in INGAP-PP mediated effects. / Doutorado / Fisiologia / Doutor em Biologia Funcional e Molecular