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High hole and electron mobilities using Strained Si/Strained Ge heterostructures

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enhancements. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3830
Date01 1900
CreatorsGupta, Saurabh, Lee, Minjoo L., Leitz, Christopher W., Fitzgerald, Eugene A.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format308344 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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