This work concerns with today's challenges of photoelectrical characterization methods in the research and development of thin film silicon solar cells. Relevant results are obtained only when photocurrent spectroscopy and measurement of current-voltage characteristics, are applied on the real structures that can however be multi-layered, multi-junction devices with nanostructured interfaces. Analytical and numerical optical models comprising light scattering are used for analysis of light absorption and for evaluation of optical absorption coefficient of silicon layers in sub-gap region. The slope of absorption edge and residual absorption in mid-gap indicate material disorder and defect density. Based on the investigation of electrical interaction between sub-cells in the dual-junction solar cell we developed new methods of evaluation of photocurrent spectra and current-voltage characteristics individually for each sub-cell with no need to contact them directly. Usability of Fourier Transform Photocurrent Spectroscopy as a robust method for photocurrent spectroscopy of amorphous silicon is thoroughly analyzed here. The issues of frequency dependence are addressed in detail and comparison with photothermal deflection spectroscopy is made.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:312189 |
| Date | January 2012 |
| Creators | Holovský, Jakub |
| Contributors | Vaněček, Milan, Sládek, Petr, Hlídek, Pavel |
| Source Sets | Czech ETDs |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/doctoralThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
Page generated in 0.0019 seconds