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Electrostatic Effects in III-V Semiconductor Based Metal-optical Nanostructures

The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc115090
Date05 1900
CreatorsGryczynski, Karol Grzegorz
ContributorsNeogi, Arup, Krokhin, Arkadii, Phillipose, Usha, Weathers, Duncan L.
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
FormatText
RightsPublic, Gryczynski, Karol Grzegorz, Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved.

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