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Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1-x)2O3

UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a
Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035<x<0.83. Such
layer was deposited by employing a continuous composition spread approach relying on the ablation
of a single segmented target in pulsed-laser deposition. The photo response signal is provided
from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was
tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes
fabricated from indium-rich part of the sample, for which an internal gain mechanism could be
identified. VC 2016 AIP Publishing LLC.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:23547
Date06 August 2018
CreatorsZhang, Zhipeng, von Wenckstern, Holger, Lenzner, Jörg, Lorenz, Michael, Grundmann, Marius
PublisherAmerican Institute of Physics, Universität Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation0003-6951, 1077-3118, 123503

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