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Design and Implementaion of a High-Performance Memory Generator

The SRAM memory generator in this thesis is divided into four parts: row decoder, storage cell, column decoder, and sense amplifier & write controller. The row decoder is designed using pass-transistors logic with better area and regularity compared with conventional NAND based decoders. Two different column decoders, tree structure and NOR based predecoder, are provided in current version. Although only SRAM is implemented in this thesis, the memory generator platform is complete with all the necessary models required in the embedded design. In the future, other memories, such as cache, shift register, FIFO, stacks, ROM, register files, and content addressable memory, can be integrated in this memory generator platform.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0818104-191756
Date18 August 2004
CreatorsLee, Wan-Ping
ContributorsShen-Fu Hsiao, Chien-Hsing Wu, Wei-Chih Hsu, Chua-Chin Wang, Ko-Chi Kuo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0818104-191756
Rightsunrestricted, Copyright information available at source archive

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