The major limiting factor of DRAM access time is the low transconductance of the
MOSFET's which have only limited current drive capability. The bipolar junction
transistor(BJT) has a collector current amplification factor, ��, times base current and is
limited mostly by the willingness to supply this base current. This collector current is
much larger than the MOSFET drain current under similar conditions. The requirements
for low power and low power densities results in lower power supply voltages which are
also inconsistent with the threshold voltage variations in CMOS technology, as a
consequence at least pulsed body bias or synchronous body bias will probably be
utilized. Given that of the CMOS body will be driven or the CMOS gate and body
connected a BJT technique is proposed for ultra low voltages like Vdd=0.5. Utilizing
present CMOS process technology good results can be achieved with ultra low power
using gate-body connected transistors and a current sense amplifier. / Graduation date: 1999
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/33344 |
| Date | 23 November 1998 |
| Creators | Gang, Yung-jin, 1957- |
| Contributors | Forbes, Leonard |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
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