We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO
fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall
and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO
type heterostructures, showed diode characteristics. For amorphous ZCO deposited at room
temperature on epitaxial ZnO/Al2O3 thin films, we achieved current rectification ratios up to
2x1010, ideality factors around 2, and long-term stability.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31194 |
| Date | 10 August 2018 |
| Creators | Schein, Friedrich-Leonhard, Winter, Markus, Böntgen, Tammo, von Wenckstern, Holger, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0003-6951, 1077-3118, 022104 |
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