In this thesis, the dimension effects and reliabilities of the p-channel poly-Si TFTs for AMOLED are successfully characterized.
We have measured and compared the electrical behaviors of devices to study dimension and temperature effects in this experiment. The influences on the narrow channel width effects are also discussed and explained. It is found that the devices with narrow channel width, exhibit promotional turn-on current and smaller threshold voltage. In addition, the stress effects in p-channel poly-silicon thin-film transistors are investigated and characterized with various applied voltages. The stress effects are clearly analyzed by different methods, such as activation energy of leakage current, changing the definition of source and drain for Vg-Id curve, and C-V measurements. Finally, a physical model was proposed to well explain the results we observed.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0628104-172829 |
| Date | 28 June 2004 |
| Creators | Shih, Chiung-Yi |
| Contributors | Tai-Fa Young, Y.L. Wang, Ting-Chang Chang, Po-Tsun Liu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628104-172829 |
| Rights | unrestricted, Copyright information available at source archive |
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