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Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si₁₋xGex/Si virtual substrates

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics. / Singapore-MIT Alliance (SMA)

Identiferoai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3989
Date01 1900
CreatorsLee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Source SetsM.I.T. Theses and Dissertation
Languageen_US
Detected LanguageEnglish
TypeArticle
Format40541 bytes, application/pdf
RelationAdvanced Materials for Micro- and Nano-Systems (AMMNS);

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