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Microstructural Development of Simox and Simox Related Materials

A novel structure related to Seperation by Implanted Oxygen (SIMOX) of NiSi2/SiO2/Si is studied for two primary reasons: the importance of metal silicide and insulating oxide in IC devices and the difficulty of direct growth of crystalline silicide on amorphous substrates.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc798205
Date05 1900
CreatorsYang, Hong
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
FormatText
RightsPublic, Copyright, Copyright is held by the author, unless otherwise noted. All rights

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