Return to search

Investigation on Electrical Analysis and Physics Mechanism of Low Temperature Polycrystalline-silicon Thin Film Transistor

There were three poly-Si TFT made by ELA, SLS, and HREC. The HREC TFT had better reliability than ELA TFT and SLS TFT under AC and hot carrier stress. And the effect of bending in SLS TFT was more obvious then ELA TFT, it provide us a better choose to develop a flexible TFT LCD.
In poly-Si TFT, the photon current would decrease if there was a grain boundary in the channel. In all parameters include both manufacture and measurement the HREC TFT had better behaviors than ELA TFT and SLS TFT. But there also some shortcomings we must overcome include we muse
growth a heat-retaining layer extra and must etch it and the poly-Si/heat-retaining etch rate and so on.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720106-010713
Date20 July 2006
CreatorsHuang, Sung-yu
ContributorsZheng-tong Huang,, Tsui-ming Cheng, Po-tsun Liu, Ting-chang Chang
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-010713
Rightsunrestricted, Copyright information available at source archive

Page generated in 0.0085 seconds