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The Growth Mechanism and Theoretical Model of CuInSe2 Thin Film Grown by MBE

The dominant research subjects are focused on the growth of high quality stoichiometric undoped CuInSe2 epitaxial films by molecular beam epitaxial growth.
For MBE growth, it is possible to obtain the high quality epitaxial films and to get the reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully. Under the conditions of fixed Cu molecular beam flux and excess Se molecular beam flux, we can control the In/Cu compositon ratio by changing In molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films. We hope it can be used in the manufacture of solar cell and get high conversion efficiency.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627100-235650
Date27 June 2000
CreatorsHo, Jian-Sheng
ContributorsWang-Chuang Kuo, J. C. Chou, Herng-Yih Ueng, Aina Hung, Cheu-Pyeng Cheng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627100-235650
Rightsrestricted, Copyright information available at source archive

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