In this research, CuInSe2 thin film is grown at 350¢J low temperature by photo-assisted co-evaporation system to fabricate PI (polyimide) substrate flexible thin film solar cells. The low temperature growing CuInSe2 is analyzed by raman spectroscopy. Besides, sputtering Mo thin film on PI and CIS/Mo/PI contact properties are also researched for device fabrication.
By studying the Ar pressure and Mo internal stress relationship during the deposition, the Mo layer has been fabricated with both low resistivity and good adhesion. The sheet resistance of Mo layer is 1.95 £[/¡¼ and shows ohmic contact with CuInSe2 at temperature below 350¢J.
Raman spectroscopy shows that photo-assisted CuInSe2 has stronger and thinner A1 peak than which without light. Two-stage growing can help eliminating Cu2Se and background signals further. CA structure vibration modes are involved in the asymmetric A1 peak broadening.
The SLG/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.320 V, short cut current, Isc = 3.61 mA, and solar cell fill factor, FF = 49.8 %. On the other hand, PI/Mo/CIS/CdS/ZnO:Al/Al structured device has open voltage, Voc = 0.318 V, short cut current, Isc = 2.71 mA, and solar cell fill factor, FF = 39.0 %¡C
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0819108-130906 |
| Date | 19 August 2008 |
| Creators | Hsu, Pin-hung |
| Contributors | Bae-Heng Tseng, Mau-Phon Houng, Der-Shin Gan |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0819108-130906 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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