For the fabrication of semiconductor devices, solar cells, and infrared detectors, thin film deposition methods are required. Of the deposition methods currently available including MBE, LPE, and MOCVD; MOCVD is preferred due to its relatively low cost per wafer, versatility, and high wafer throughput. Requirements which must be considered in the design of a deposition system are discussed. An MOCVD system is designed such that MOCVD can be carried out by plasma enhanced deposition (PED) or low pressure metal-organic chemical vapor deposition (LPMOCVD). As a result of the inherent characteristics of the two methods, a wide range of operational temperatures and pressures are possible. Software is developed for system control including a graphical display of the process schematic. The deposition of GaAS on Si is given as one possible application for this type system.
| Identifer | oai:union.ndltd.org:ucf.edu/oai:stars.library.ucf.edu:rtd-6153 |
| Date | 01 January 1988 |
| Creators | Cox, David B. |
| Publisher | University of Central Florida |
| Source Sets | University of Central Florida |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Retrospective Theses and Dissertations |
| Rights | Public Domain |
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