The role of high doping levels and the interfacial structure on the junction behavior
between n-type silicon microwires and the conducting polymer, PEDOT:PSS, was
investigated using tungsten probes, an established technique for Ohmic contact to
individual microwires. The resistance and the doping density of carriers as a function of
length along each microwire as well as the junction resistance between individual
microwires and the conducting polymer were characterized by making Ohmic contact to
microwires. The junction between highly-doped n-Si microwires and the conducting
polymer had relatively symmetric current-voltage characteristics and a significantly
lower junction resistance as compared to low-doped microwires. The current-voltage
response of junctions formed between the polymer and low-doped microwires, which still
incorporated the metal catalyst used in the growth process, was also studied. Junctions
incorporating copper at the interface had similar current-voltage characteristics to those
observed for the highly-doped microwire, while junctions incorporating gold exhibited
significantly lower resistances
| Identifer | oai:union.ndltd.org:MANITOBA/oai:mspace.lib.umanitoba.ca:1993/23885 |
| Date | 26 August 2014 |
| Creators | Asgari, Sommayeh |
| Contributors | Oliver, Derek.R (Electrical and Computer Engineering) Freund, Michael.S (Chemistry), Filizadeh, Shaahin (Electrical and Computer Engineering) Xing, Malcolm (Mechanical Engineering) |
| Source Sets | University of Manitoba Canada |
| Detected Language | English |
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