In the process of sputtering, what a system operator concerns are the sputtering rate, target utilization, and substrates uniformity. All of them are influenced by variables such as electromagnetic environment, chamber temperature, and pressure. In thin film manufacturing, targets bombarded by ions will sputter atoms to the substrates in order to make thin films; therefore, when a certain target zone is extensively bombarded by ions, target surface will become thinner. In general, when certain part of the target is penetrated, it is no longer usable while utilization rate only from 30 to 50 percent. It causes considerable waste and relatively higher costs. As a result, the objective of this study is to enhance target utilization and the sputtering rate through appropriate adjustment in the structure of the existing DC Magnetron Sputtering System (MSS). Since, the magnetic field distribution in the chamber will be appropriately adjusted inside the DC MSS with extra iron annulus and active compensation magnetizations being added. However, in order to get the better structural refinement of DC MSS it needs a thorough design and management based on Taguchi Method. Then, based on such structural adjustment, electron trajectories on top surface of targets can be conveniently controlled, and target erosion patterns and the number of ions bombarding the target will be indirectly controlled. It will, as a result, achieve the objective of this study by enhancing not only the target utilization efficiency but the sputtering rate.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0802111-163350 |
| Date | 02 August 2011 |
| Creators | Yeh, Hsiao-chun |
| Contributors | Li Wang, Chang-Chou Hwang, Cheng-Tsung Liu, Yaw-Juen Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0802111-163350 |
| Rights | user_define, Copyright information available at source archive |
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