Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si₁₋xGex/Si virtual substrates

Description

We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel was eliminated by capping the strained Ge layer with a relaxed, epitaxial silicon surface layer grown at 400° C. Ge p-MOSFETs fabricated from this structure show a hole mobility enhancement of nearly 8 times that of co-processed bulk Si devices, and the Ge MOSFETs have a peak effective mobility of 1160 cm²/V-s. These MOSFETs demonstrate the possibility of creating a surface channel enhancement mode MOSFET with buried channel-like transport characteristics. / Singapore-MIT Alliance (SMA)

Links & Downloads

1. http://hdl.handle.net/1721.1/3989

Tags

strained-Ge

SiGe

germanium

MOSFET

mobility

strained-Si

pMOSFET

Additional Fields

Identifer	oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3989
Date	01 1900
Creators	Lee, Minjoo L., Leitz, Christopher W., Cheng, Zhiyuan, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
Source Sets	M.I.T. Theses and Dissertation
Language	en_US
Detected Language	English
Type	Article
Format	40541 bytes, application/pdf
Relation	Advanced Materials for Micro- and Nano-Systems (AMMNS);