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Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology

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Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/2044
Date28 August 2008
CreatorsKim, Young-Hee
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis, text
Formatelectronic
RightsCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.

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