The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. This thesis work was carried out as a part of the UAV (Unmanned Aerial Vehicle) system project developed by a research group at the Radio communication and Microwave Electronics department, UMH.The project was designed and simulated using Agilent ADS (Advanced Design System) software.
Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:hig-24570 |
Date | January 2017 |
Creators | Rivera Suaña, Javier Alvaro |
Publisher | Högskolan i Gävle, Elektronik |
Source Sets | DiVA Archive at Upsalla University |
Language | English |
Detected Language | English |
Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
Format | application/pdf |
Rights | info:eu-repo/semantics/openAccess |
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