The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. This thesis work was carried out as a part of the UAV (Unmanned Aerial Vehicle) system project developed by a research group at the Radio communication and Microwave Electronics department, UMH.The project was designed and simulated using Agilent ADS (Advanced Design System) software.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:hig-24570 |
| Date | January 2017 |
| Creators | Rivera Suaña, Javier Alvaro |
| Publisher | Högskolan i Gävle, Elektronik |
| Source Sets | DiVA Archive at Upsalla University |
| Language | English |
| Detected Language | English |
| Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
Page generated in 0.0019 seconds