With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0217111-150118 |
| Date | 17 February 2011 |
| Creators | Wu, Shang-jie |
| Contributors | Fu-jen Kao, Hung-wen Chang, Wood-hi Cheng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0217111-150118 |
| Rights | off_campus_withheld, Copyright information available at source archive |
Page generated in 0.002 seconds