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The radiative recombination study of InGaN/GaN MQW LED and the Photoluminescence study of ZnMgSe thin film

This thesis used TCSPC (Time-Correlated Single Photon Counting) apparatus to study the time-resolve photoluminescence (TRPL) of InGaN multi-quantum-well light emission diode and the photoluminescence of Zn1-xMgxSe properties at different Mg concentration. We obtained the activation energy form Arrhenius Plot, internal quantum efficiency (IQE), the radiative lifetime, and the radiative recombination critical at 180K of In0.25Ga0.75N multi-quantum well LED. Furthermore, the variation of PL peak location and FWHM with Mg concentration of Zn1-xMgxSe thin film with x=0.1¡B0.25¡B0.34¡B0.37¡B0.4¡B0.42 are observed.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0215112-001413
Date15 February 2012
CreatorsWang, Shiang-Fu
ContributorsLi-Wei Tu, Der-Jun Jang, Yung-Sung Chen, Chie-Tong Kuo, Meng-En Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0215112-001413
Rightsuser_define, Copyright information available at source archive

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