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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

The development of X-ray Excited Optical Luminescence (XEOL) spectroscopic techniques for mineralogical and petrological applications

Taylor, Richard Peter January 2013 (has links)
This thesis investigates the use of X-ray Excited Optical Luminescence (XEOL) and Time Resolved X-ray Excited Optical Luminescence (TR XEOL) within the Earth sciences. The project contains two primary objectives, the first of which is the design and building of a high-resolution luminescence spectroscopy facility. This includes the installation and commissioning of the facility on the I18 microfocus beamline at Diamond, the UK's national synchrotron facility. In describing the system's design and commissioning, I explore many implications of the technique. The second objective is using this new facility to investigate a suite of minerals to develop new analytical techniques utilizing XEOL and TR XEOL spectroscopy for applications within the Earth sciences. An aspect of this investigation is to explore the potential of Time Resolved Optically Derived X-ray Absorption Spectroscopy (TR OD XAS) of substitute trace elements in minerals. To date CW OD XAS has been shown to have very limited application within the Earth sciences. (Soderholm et al., 1998-120) The thesis explores differences between photoluminescence (PL) and XEOL responses in mineral systems, and investigates how these differences can be exploited. Luminescence, the phenomenon upon which the thesis is based, is a complex and poorly utilised phenomena within Earth sciences, it is however, orders of magnitude more sensitive, than many of the more accepted techniques used for the detection of trace elements, on this basis alone I would suggest it deserves further consideration. Luminescence techniques have developed much further in other disciplines; I therefore have incorporated many descriptions, models, and interpretations from other disciplines in order to identify methodologies and techniques that have the potential to be utilized in the study and interpretation of luminescence within the Earth sciences. The thesis demonstrates that luminescence in minerals with measured lifetimes, as fast as ~ 20 ps exist. Previously the recorded luminescent lifetimes, for minerals, in the literature are measured in ns. This finding leads to the novel concept that the measurement of TR XEOL with ps resolution combined with the measurement of the intensity of a luminescent signal as a function of excitation can provide significant new insights into the nature of the emission and the luminescent processes. I explore and demonstrate the potential of using dose dependence techniques of continuous wave and TR XEOL as a new analytical technique. I also demonstrate the use of a technique used extensively within Biology has an application with Earth sciences. The methodology incorporates the calculation of the natural lifetime of an emission through the relationship between the absorption and emission coefficients. (Strickler and Berg, 1962). I discuss how knowledge of the natural lifetime of an emission allows quantification of luminescence through measurement of a modified lifetime of emission. The quantification of a luminescent emission has significant potential within the geosciences one example being the identification of disputed emissions. I also consider the potential to use TR XEOL techniques in mapping complex heterogeneous rocks and minerals.
2

The radiative recombination study of InGaN/GaN MQW LED and the Photoluminescence study of ZnMgSe thin film

Wang, Shiang-Fu 15 February 2012 (has links)
This thesis used TCSPC (Time-Correlated Single Photon Counting) apparatus to study the time-resolve photoluminescence (TRPL) of InGaN multi-quantum-well light emission diode and the photoluminescence of Zn1-xMgxSe properties at different Mg concentration. We obtained the activation energy form Arrhenius Plot, internal quantum efficiency (IQE), the radiative lifetime, and the radiative recombination critical at 180K of In0.25Ga0.75N multi-quantum well LED. Furthermore, the variation of PL peak location and FWHM with Mg concentration of Zn1-xMgxSe thin film with x=0.1¡B0.25¡B0.34¡B0.37¡B0.4¡B0.42 are observed.
3

The Study of Optical Properties of Nano Crystal Silicon

Lin, Yu-hsuan 26 July 2008 (has links)
In this thesis, using Micro-Photoluminescence (£g-PL), continuous-wave time-resolved photoluminescence (CWPL/TRPL) and Fourier transform infrared (FTIR) analysis, silicon rich nc-Si (nano-crystal Silicon) samples with various emission wavelength (760 30 nm and 390 10 nm) are investigated to understand the proper explanation of the emission mechanism. The model of increasing Si¡ÐO ¡ÐSi bondings during thermal process by enhancing the annealing or deposition time, induced blue shifts in PL spectrums and increased the rate of Schockley-Read-Hall recombination which resulted in the enhancement of its fluorescence is provided.
4

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

Mumthaz Muhammed, Mufasila 11 March 2018 (has links)
III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of the substrate developed as a part of this study yields better current and heat characteristics, while its transparency ensures high light extraction. The straightforward and direct growth process employed does not require a high-cost complex fabrication process. Finally, a broadband photodetector composed of the emerging CH3NH3PbI3 perovskite with the p-GaN, is developed. The findings reported in this dissertation demonstrate the superior performance of CH3NH3PbI3/GaN photodetectors produced by simple and cost-effective solution processed spray-coating method. In particular, it is demonstrated that perovskite/GaN device can work as a self-powered photodetector.
5

Study of Carrier Cooling in Zn0.91Cd0.09Se/ZnSe Multiple Quantum Wells

Chung, Yung-Hsien 14 July 2004 (has links)
The hot carrier dynamics of Zn0.91Cd0.09Se/ZnSe multi-quantum wells were studied using the femtosecond time-resolved photoluminescence upconversion technique. The carrier cooling behavior was investigated for different compositions at various lattice temperatures. The hot carriers generated photoexcitation by 405nm Ti:sapphire laser pulses release their excess energy primarily through carrier-LO-phonon interaction. As the excess energy reduce to the amount that lower than the energy of LO phonon, the excess energy was released by carrier-TA-phonon scattering before radiative recombination occurs. We have determined the scattering times of carrier-LO-phonon scattering at different lattice temperatures. No hot phonon effects was found at low photoexcited carrier density. The dependence of photoluminescence lifetime on wavelength was also discussed.
6

The Study of Carrier Relaxation in Multi-Stacked InAs/GaAs Quantum Dots

Lu, Shu-kai 11 August 2006 (has links)
Carrier dynamics of mullti-stacked quantum dots (MSQDs) have been studied by means of time-integrated and time-resolved photoluminescence (PL). The MSQD with different spacer thickness of 10, 15, 20 and 30 nm were grown by molecular beam epitaxy. Time-integrated PL exhibit red shift as spacer thickness increases. The red shift originated from the vertical coupling relaxes the strain in the MSQDs, leading to a decrease in the PL peak energy. From time-resolved PL, the MSQD with spacer thickness increased reveals the shorter lifetime of PL peak among samples studies. We attribute the maximum of lifetime to a better vertical alignment. We report on a measurement of the rise and decay of luminescence intensity in the MSQDs excited at 1.54 eV (808 nm) and 3.09 eV (404 nm). The results show a slow rise time of electrons from the L to the £F valley for high photoexcitation energies. The decay in luminescence is longest with photoexcitation at 3.09 eV, we demonstrate the importance of the penetration depth and carriers tunneling. In addition, the MSQDs strongly depends of on the carrier injection. The rise times decrease with increasing excitation density. The properties are characteristic features of Auger processes.
7

Développement de nouvelles méthodes de caractérisation optoélectroniques des cellules solaires photovoltaïques par imagerie de luminescence / Development of characterization methods for thin film solar photovoltaics using time-resolved and hyperspectral luminescence imaging

El Hajje, Gilbert 16 December 2016 (has links)
La connaissance approfondie sur la luminescence des dispositifs photovoltaïques (PV) en a fait un outil de caractérisation puissant qui capte l'intérêt de la recherche et des industries du PV. Dans cette thèse, nous nous concentrons sur la luminescence des cellules solaires photovoltaïques à base de Cu(In,Ga)Se2. En particulier, nous explorons et revisitons ses dépendances temporelles, spectrales et spatiales. Cela a abouti dans un premier temps à la mise au point de nouvelles méthodes de caractérisation basée sur la luminescence de cette technologie PV en particulier. Nous montrons d’abord que par l’intermédiaire d'une méthode sans contact toute optique, nous sommes en mesure de détecter et de localiser les métastabilités de cette technologie. En utilisant une approche numérique basée sur des résultats expérimentaux de photoluminescence résolue en temps (TRPL) nous avions réussi à quantifier la densité des défauts de piégeage qui sont derrière ces métastabilités. Une fois quantifiée, nous traduisons cette densité en pertes absolues de performance PV de la cellule solaire. Ensuite, en explorant la dépendance spatiale de la luminescence des cellules solaires à base de Cu(In,Ga)Se2, nous avions corrélé avec succès, ses aspects temporels et spectrales en se basant sur la microscopie confocale à balayage et l’imagerie hyperspectrale. Cela nous a permis de généraliser nos résultats précédents à l'échelle globale des cellules solaires. Cette partie de la thèse nous a aidés à mieux comprendre une des origines fondamentales derrière l’inhomogénéité spatiale de la luminescence de ce type de dispositifs photovoltaïques.La dernière partie de la thèse était essentiellement technique et exploratoire. En particulier, nous introduisons une nouvelle technique optique dans le domaine de la caractérisation des dispositifs PV. Cette technique est dédiée à l’imagerie résolue en temps du temps de vie de fluorescence (TR-FLIM). Le principe de cette technique consiste essentiellement en acquisition d'images de luminescence du dispositif PV qui sont résolues temporellement. Avec ce nouveau dispositif expérimental, nous sommes maintenant en mesure de résoudre spatialement, et en temps réel la dynamique des porteurs de charge d'une technologie photovoltaïque donnée et accéder à ses propriétés électroniques clés. Une première démonstration a été faite sur une cellule solaire à base de GaAs, et pour laquelle nous avions extrait optiquement, la longueur de diffusion, la mobilité et le temps de vie de ses porteurs. De plus, nous avions pu estimer le coefficient de diffusion du matériau et son taux de dopage. / The extensive knowledge on the luminescence of photovoltaic (PV) devices has made it a powerful characterization tool that captures the interest of both research and industrial PV communities. In this thesis, we focus on the luminescence of Cu(In,Ga)Se2-based solar PV. In particular, we explore and revisit the luminescence temporal, spectral and spatial dependencies. This resulted in the development of new luminescence-based characterization methods for this particular PV technology. We show initially that by means of an all-optical, contactless methodology, we are able to detect and localize the metastabilities of this technology. Using a numerical approach based on experimental time-resolved photoluminescence (TRPL) we managed to quantify the trapping defects that are behind these metastabilities. Once quantified, we translated it into absolute losses in the PV performance of the solar cell. By exploring the spatial dependence of the luminescence of Cu(In,Ga)Se2 solar cells, we successfully correlated its temporal and spectral aspects based on scanning confocal microscopy and hyperspectral imaging. This allowed us to generalize our previous findings at the global solar cell scale. This part of the thesis helped us better understand one of the fundamental origins behind the spatially inhomogeneous luminescence of Cu(In,Ga)Se2 PV devices. The final part of the thesis was mainly technical and exploratory. In particular, we introduced a new optical technique to the field of PV characterization. It is dedicated to time-resolved fluorescence lifetime imaging (TR-FLIM) which basically consists of acquiring time-resolved luminescence images of the PV device. With this new setup we are now able to spatially resolve, in real-time the charge carrier dynamics of a given PV technology and access its key electronic properties. A first application was made on a GaAs-based solar cell, for which we were able to optically extract the mobility, diffusion length and lifetime of its carriers. Finally, we were also able to estimate the diffusion coefficient of the material and its doping density.
8

Spectroscopie des transitions excitoniques dans des puits quantiques GaN/AlGaN

Rakotonanahary, Georges 15 April 2011 (has links)
Ce travail de thèse porte sur l’étude des propriétés optiques et électroniques des puits quantiques de GaN / AlGaN grâce à des techniques classiques de réflectivité résolue en angle et de photoluminescence, ainsi qu’avec la technique de photoluminescence résolue temporellement. Les expériences de photoluminescence en régime continu ont permis d’estimer les énergies des transitions excitoniques qui sont également accessibles en réflectivité. Ces techniques ont ainsi permis de mettre en évidence l’effet Stark dans les puits quantiques GaN / AlGaN. L’effet Stark sur les énergies de transition est cohérent avec la théorie des fonctions enveloppes. Les spectres de réflectivité permettent d’accéder à la force d’oscillateur des excitons grâce à leur modélisation par le formalisme des matrices de transfert, prenant en compte les phénomènes d’élargissement homogène et inhomogènes des transitions optiques. Enfin, les mesures de photoluminescence résolue en temps en fonction de la température, ont également permis d’extraire la force d’oscillateur qui est inversement proportionnelle au temps de recombinaison radiative. Cette étude a également permis de mettre en évidence l’effet Stark responsable de la diminution de la force d’oscillateur en fonction de l’épaisseur du puits quantique mais aussi en fonction de la composition d’aluminium. L’augmentation de l’épaisseur du puits entraîne une diminution du recouvrement des fonctions d’onde, et une augmentation de la composition d’aluminium intensifie le champ électrique et diminue également le recouvrement des fonctions d’onde. / This work deals with the study of optical and electronic properties of GaN / AlGaN quantum wells, by classical techniques of spectroscopy including angle resolved reflectivity or photoluminescence, but also by time resolved photoluminescence. The continuous wave photoluminescence experiments allowed estimating the energies of the excitonic transitions, which are also available through reflectivity. These techniques highlighted the Stark effect in GaN / AlGaN quantum wells. The influence of the Stark effect on the energies of the excitonic transitions is well reproduced by envelop functions theory. Reflectivity spectra give access to the oscillator strength via their fitting by transfer matrix formalism, taking in account both homogeneous and inhomogeneous broadenings of the optical transitions. Finally, time resolved photoluminescence measurements as a function of temperature were performed to extract the oscillator strength, which is proportional to the inverse of the radiative recombination time. This technique also highlighted the Stark effect which is responsible of the vanishing of the oscillator strength with the thickness of the well and the aluminium composition. Increasing of the quantum well’s thickness induces decreasing of wave functions overlap, as well as an increasing of the aluminium composition which intensifies the electric field and splits the wave functions.
9

Spectroscopie des transitions excitoniques dans des puits quantiques GaN/AlGaN / Spectroscopy of excitonic transitions in GaN/AlGaN quantum wells

Rakotonanahary, Georges 15 April 2011 (has links)
Ce travail de thèse porte sur l’étude des propriétés optiques et électroniques des puits quantiques de GaN / AlGaN grâce à des techniques classiques de réflectivité résolue en angle et de photoluminescence, ainsi qu’avec la technique de photoluminescence résolue temporellement. Les expériences de photoluminescence en régime continu ont permis d’estimer les énergies des transitions excitoniques qui sont également accessibles en réflectivité. Ces techniques ont ainsi permis de mettre en évidence l’effet Stark dans les puits quantiques GaN / AlGaN. L’effet Stark sur les énergies de transition est cohérent avec la théorie des fonctions enveloppes. Les spectres de réflectivité permettent d’accéder à la force d’oscillateur des excitons grâce à leur modélisation par le formalisme des matrices de transfert, prenant en compte les phénomènes d’élargissement homogène et inhomogènes des transitions optiques. Enfin, les mesures de photoluminescence résolue en temps en fonction de la température, ont également permis d’extraire la force d’oscillateur qui est inversement proportionnelle au temps de recombinaison radiative. Cette étude a également permis de mettre en évidence l’effet Stark responsable de la diminution de la force d’oscillateur en fonction de l’épaisseur du puits quantique mais aussi en fonction de la composition d’aluminium. L’augmentation de l’épaisseur du puits entraîne une diminution du recouvrement des fonctions d’onde, et une augmentation de la composition d’aluminium intensifie le champ électrique et diminue également le recouvrement des fonctions d’onde. / This work deals with the study of optical and electronic properties of GaN / AlGaN quantum wells, by classical techniques of spectroscopy including angle resolved reflectivity or photoluminescence, but also by time resolved photoluminescence. The continuous wave photoluminescence experiments allowed estimating the energies of the excitonic transitions, which are also available through reflectivity. These techniques highlighted the Stark effect in GaN / AlGaN quantum wells. The influence of the Stark effect on the energies of the excitonic transitions is well reproduced by envelop functions theory. Reflectivity spectra give access to the oscillator strength via their fitting by transfer matrix formalism, taking in account both homogeneous and inhomogeneous broadenings of the optical transitions. Finally, time resolved photoluminescence measurements as a function of temperature were performed to extract the oscillator strength, which is proportional to the inverse of the radiative recombination time. This technique also highlighted the Stark effect which is responsible of the vanishing of the oscillator strength with the thickness of the well and the aluminium composition. Increasing of the quantum well’s thickness induces decreasing of wave functions overlap, as well as an increasing of the aluminium composition which intensifies the electric field and splits the wave functions.
10

Synthesis, Characterization, Structural, and Optical Properties of Zinc Oxide Nanostructures Embedded in Silicon Based Substrates

Pandey, Bimal 05 1900 (has links)
Structural and optical properties of ZnO nanostructures synthesized by low energy ion implantation technique were examined. ZnO molecular ions were implanted into Si/SiO2 substrates at room temperature and then furnace annealed under different temperatures and environments. In all as-implanted samples only Zn nanostructures with varying diameters distributed into the Si/SiO2 matrices were observed. No trace of ZnO was found. The distributions of Zn nanostructures in Si/SiO2 closely matched results from Stopping and Range of Ions in Matter (SRIM) simulations. During annealing at 750 oC, Zn diffused both toward and away from the surface of the substrate and combine with oxygen to form ZnO nanostructures. At higher annealing temperatures ZnO bonding started to break down and transfer to zinc silicate (Zn2SiO4), and at 900 oC the ZnO was completely converted into Zn2SiO4. The average sizes of Zn/ZnO nanostructures depended on the ion fluence. If the fluence increased the average sizes of nanostructures also increased and vice versa. For room temperature photoluminescence (RT-PL), band-edge emission in the ultraviolet (UV) region was observed from all samples annealed at 700 oC/750 oC and were slightly blue shifted as compare to bulk ZnO. Donor-bound exciton (D,X) and acceptor-bound exciton (A,X) transitions were observed in low temperature photoluminescence (PL). The lifetime of both donor-bound excitonic emission (D, X) and acceptor-bound excitonic emission (A, X) were found to be in the picosecond (ps) range.

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